AI Article Synopsis
- Ultrathin two-dimensional metallic vanadium dichalcogenides, particularly vanadium ditelluride (VTe), are gaining interest for their unique charge density wave properties and potential ferromagnetism.
- Recently, researchers synthesized VTe using atmospheric pressure chemical vapor deposition (APCVD) with vanadium chloride on various substrates, achieving a thin film around 10 nm on hexagonal boron nitride (h-BN).
- Temperature-dependent Raman spectroscopy revealed significant changes in Raman modes at approximately 413 K, highlighting a structural phase transition of VTe.
Article Abstract
Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium ditelluride (VTe). The synthesis is done by atmospheric pressure chemical vapor deposition (APCVD) using vanadium chloride (VCl) precursor on fluorphlogopite mica, sapphire, and h-BN substrates. A large area of the thin film with thickness ∼10 nm is grown on the hexagonal boron nitride (h-BN) substrate. Temperature-dependent Raman characterization of VTe is conducted from room temperature to 513 K. Remarkable changes of Raman modes at around 413 K are observed, indicating the structural phase transition.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693834 | PMC |
| http://dx.doi.org/10.1039/d0ra07868a | DOI Listing |
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