Here, we combine the piezoelectric wurtzite ZnO and the ferroelectric (111) BaTiO as a hexagonal closed-packed structure and report a systematic theoretical study on the ferroelectric behavior induced by the interface of ZnO/BaTiO films and the transport properties between the SrRuO electrodes. The parallel and antiparallel polarizations of ZnO and BaTiO can lead to intrinsic asymmetric ferroelectricity in the ZnO/BaTiO superlattice. Using first-principles calculations we demonstrate four different configurations for the ZnO/BaTiO/ZnO superlattice with respective terminations and find one most favorable for the stable existence of asymmetric ferroelectricity in thin films with thickness less than 4 nm. Combining density functional theory calculations with non equilibrium Green's function formalism, we investigate the electron transport properties of SrRuO/ZnO/BaTiO/ZnO/SrRuO FTJ and SrRuO/ZnO/BaTiO/SrRuO FTJ, and reveal a high TER effect of 581% and 112% respectively. These findings provide an important insight into the understanding of how the interface affects the polarization in the ZnO/BaTiO superlattice and may suggest a controllable and unambiguous way to build ferroelectric and multiferroic tunnel junctions.
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http://dx.doi.org/10.1039/d0ra09228b | DOI Listing |
Nature
January 2025
Department of Materials Engineering, Indian Institute of Science, Bangalore, India.
Piezoelectric materials directly convert between electrical and mechanical energies. They are used as transducers in applications such as nano-positioning and ultrasound imaging. Improving the properties of these devices requires piezoelectric materials capable of delivering a large longitudinal strain on the application of an electric field.
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January 2025
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
Proximity ferroelectricity is an interface-associated phenomenon in electric-field-driven polarization reversal in a non-ferroelectric polar material induced by one or more adjacent ferroelectric materials. Here we report proximity ferroelectricity in wurtzite ferroelectric heterostructures. In the present case, the non-ferroelectric layers are AlN and ZnO, whereas the ferroelectric layers are AlBN, AlScN and ZnMgO.
View Article and Find Full Text PDFACS Nano
January 2025
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit, and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-controlled superconducting switch in GaSe/NbSe van der Waals (vdW) heterostructure.
View Article and Find Full Text PDFNat Commun
December 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
Extending ferroelectric materials to two-dimensional limit provides versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices.
View Article and Find Full Text PDFNano Converg
December 2024
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-Ro, Yuseong-Gu, Daejeon, 34141, South Korea.
The advancement in high-performance computing technologies, including quantum and aerospace systems, necessitates components that operate efficiently at cryogenic temperatures. In this study, we demonstrate a hafnia-based ferroelectric tunnel junction (FTJ) that achieves a record-high tunneling electroresistance (TER) ratio of over 200,000 and decade-long retention characteristics. By introducing asymmetric oxygen vacancies through the strategic use of indium oxide (InO) layer, we enhance the TER ratio without increasing off-current, addressing the longstanding issue of low on-current in hafnia-based FTJs.
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