Graphene oxide (GO) was discovered as a liquid crystalline (LC) phase formation in its water dispersion and expanded to a large number of applications, such as highly ordered GO sheets papers, films, and foams. However, there are still few efficient ways to prepare graphene oxide liquid crystals (GOLCs) with long-range highly ordered flakes. In this work, after carefully studying the rheological properties of GO aqueous dispersions at different concentrations, we have provided a new method to prepare holistically-oriented GOLCs through a designed coat-hanger die. Further, by simulating the extrusion process in the slot of the coat-hanger die, the die's dimensional sizes were optimized to apply efficient shear force on GO dispersions. Then, GOLCs with long-range highly ordered flakes of different GO concentrations were prepared using this method. Finally, a GO foam with a highly ordered structure was prepared using a layer-by-layer method, which exhibited improved conductivity compared to that of normal disordered GO foams after chemical reduction.
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http://dx.doi.org/10.1039/d1ra01241j | DOI Listing |
Nat Commun
December 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
Extending ferroelectric materials to two-dimensional limit provides versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices.
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December 2024
Department of Electronics and Information Convergence Engineering, Kyung Hee University, Yongin-si, Republic of Korea.
Self-assembled configurations are versatile for applications in which liquid-mediated phenomena are employed to ensure that static or mild physical interactions between assembling blocks take advantage of local energy minima. For granular materials, however, a particle's momentum in air leads to random collisions and the formation of disordered phases, eventually producing jammed configurations when densely packed. Therefore, unlike fluidic self-assembly, the self-assembly of dry particles typically lacks programmability based on density and ordering symmetry and has thus been limited in applications.
View Article and Find Full Text PDFNat Commun
December 2024
Department of Chemistry, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang Province, China.
The solid-state integration of molecular electron spin qubits could promote the advancement of molecular quantum information science. With highly ordered structures and rational designability, microporous framework materials offer ideal matrices to host qubits. They exhibit tunable phonon dispersion relations and spin distributions, enabling optimization of essential qubit properties including the spin-lattice relaxation time (T) and decoherence time.
View Article and Find Full Text PDFZ Naturforsch C J Biosci
January 2025
Laboratory of Molecular Chemistry and Natural Substances, Faculty of Sciences of Meknes, 11201 Zitoune-Meknes B.P, Meknes, Meknes, Morocco.
In order to search for new chemotypes and to carry out a comparative study with the literature, the current study investigated the chemical composition of the essential oil of the flowers of (L.) ssp. using gas chromatography coupled with mass spectrometry (GC-MS).
View Article and Find Full Text PDFSmall Methods
December 2024
Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
This study introduces a novel method for achieving highly ordered-crystalline InGaO [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma-enhanced atomic-layer-deposition (PEALD) with dual seed crystal layers (SCLs) of γ-AlO and ZnO. Field-effect transistors (FETs) with random polycrystalline InGaO channels (grown without SCLs) show a mobility (µFE) of 85.
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