Aluminum anodization in an aqueous solution of formic acid and sodium vanadate leads to the formation of alumina/carbon composite films. This process was optimized by varying the concentrations of formic acid and sodium vanadate, the pH, and the processing time in constant-voltage (60-100 V) or constant-current mode. As estimated, in this electrolyte, the anodizing conditions played a critical role in forming thick, nanoporous anodic films with surprisingly high carbon content up to 17 at.%. The morphology and composition of these films were examined by scanning electron microscopy, ellipsometry, EDS mapping, and thermogravimetry coupled with mass spectrometry. For the analysis of incorporated carbon species, X-ray photoelectron and Auger spectroscopies were applied, indicating the presence of carbon in both the and the states. For these films, the Tauc plots derived from the experimental diffuse reflectance spectra revealed an unprecedentedly low bandgap () of 1.78 eV compared with the characteristic values of alumina films formed in solutions of other carboxylic acids under conventional anodization conditions and visible-light absorption.
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http://dx.doi.org/10.3390/ma15072700 | DOI Listing |
Dalton Trans
January 2025
Department of Solid State Sciences, CoCooN research group, Ghent University, Krijgslaan 281 (S1), 9000 Gent, Belgium.
Phosphorous-containing materials are used in a wide array of fields, from energy conversion and storage to heterogeneous catalysis and biomaterials. Among these materials, organic-inorganic metal phosphonate solids and thin films present an interesting option, due to their remarkable thermal and chemical stability. Yet, the synthesis of phosphonate hybrids by vapour phase thin film deposition techniques remains largely unexplored.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
School of Integrated Circuit, Southeast University, Nanjing 210096, China.
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
This study offers a comprehensive summary of the current states as well as potential future directions of transparent conducting oxides (TCOs), particularly tin-doped indium oxide (ITO), the most readily accessible TCO on the market. Solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), antireflection (AR) coatings for airbus windows, photovoltaic and optoelectronic devices, transparent p-n junction diodes, etc. are a few of the best uses for this material.
View Article and Find Full Text PDFCurr Microbiol
December 2024
Bionanomaterials Research Lab, Department of Nanoscience and Technology, Alagappa University, Karaikudi, Tamil Nadu, India.
Food Packaging using antibacterial substances plays a vital role in food industry in controlling contamination caused by food borne pathogens. Stability and pH dependent degradation characteristics of zeolitic imidazole framework-8 (ZIF-8) makes its suitable candidate for biomedical applications. The present study focuses on thyme essential oil (TEO) encapsulated in ZIF-8 to achieve a synergistic antibacterial effect and prolonged drug release, aiming to extend the shelf life of food products.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
School of Microelectronics, Fudan University, State Key Laboratory of Integrated Chips and Systems, Shanghai, 200433, P. R. China.
Hafnium oxide (HfO)-based devices have been extensively evaluated for high-speed and low-power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co-doping HfO thin films on the ferroelectric characteristics of hafnium-based devices is investigated. Among devices with different La/Al ratios, the Al and La co-doped hafnium oxide (HfAlAO) device with 4.
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