Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field.

Nanomaterials (Basel)

Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via G. Caruso 16, 56122 Pisa, Italy.

Published: March 2022

The effect of an orthogonal magnetic field is introduced into a numerical simulator, based on the solution of the Dirac equation in the reciprocal space, for the study of transport in graphene devices consisting of armchair ribbons with a generic potential. Different approaches are proposed to reach this aim. Their efficiency and range of applicability are compared, with particular focus on the requirements in terms of model setup and on the possible numerical issues that may arise. Then, the extended code is successfully validated, simulating several interesting magnetic-related phenomena in graphene devices, including magnetic-field-induced energy-gap modulation, coherent electron focusing, and Aharonov-Bohm interference effects.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9000618PMC
http://dx.doi.org/10.3390/nano12071087DOI Listing

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