Physical Operations of a Self-Powered IZTO/β-GaO Schottky Barrier Diode Photodetector.

In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-GaO by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J-V characteristics of IZTO/β-GaO Schottky barrier diodes (SBDs) in the dark. Good agreement between the simulation and the measurement was achieved by studying the effect of the IZTO workfunction, β-GaO interfacial layer (IL) electron affinity, and the concentrations of interfacial traps. The IZTO/β-GaO (SBDs) was tested at a wavelength of 255 nm with the photo power density of 1 mW/cm. A high photo-to-dark current ratio of 3.70×105 and a photoresponsivity of 0.64 mA/W were obtained at 0 V as self-powered operation. Finally, with increasing power density the photocurrent increased, and a 17.80 mA/W responsivity under 10 mW/cm was obtained.