Novel insight into charge transfer regulation based on carrier density-dependent Ag/ITO composite films.

Cosputtering technology was utilized to prepare a Ag and indium tin oxide (ITO) composite on a flat polystyrene (PS) microsphere array. The carrier density estimated by Hall effect testing of different Sn concentrations in the cosputtered films can be tuned from 10 to 10 cm. The bandgap calculated based on ultraviolet photoelectron spectroscopy can be adjusted within the range of 3.95-4.02 eV. We explored the possible mechanism of charge transfer (CT) by varying the bandgap and explained the causes of the surface-enhanced Raman scattering (SERS). Surprisingly, a synchronous change in the CT process with the carrier density was discovered. This observation suggests that the CT process can be precisely regulated by changes in the composition of the metal-semiconductor nanostructures. Our study provides a reference for the application of Ag/ITO films as alternative near-infrared plasmonic materials.