While using ferroelectric polarization to tune the functional properties of 2D materials has been extensively studied recently, the effects of 2D materials on the ferroelectricity and piezoelectricity of ferroelectrics are much less explored. In this work, we report markedly enhanced ferroelectric and piezoelectric properties of graphene/Pb(ZrTi)O/SrRuO (GR/PZT/SRO) capacitors. Compared with conventional metal-electroded ferroelectric capacitors, the GR/PZT/SRO capacitors exhibit more abrupt polarization switching, larger switchable polarization, lower leakage current, and smaller coercive voltage. Moreover, with graphene electrodes, the ferroelectric properties of PZT capacitors are much more stable against aging. The enhanced ferroelectric behaviors in GR/PZT/SRO capacitors can be attributed to an improved interface with fewer defects and inhibited growth of defective interfacial layer resulting from the graphene protection. Because of the atomic thickness and extraordinary mechanical flexibility of graphene, the piezoelectric response in PZT with graphene electrode is about four times larger than the one with an Au electrode. Our findings on the enhanced ferroelectric and piezoelectric properties of PZT with 2D electrodes advance the understanding of the 2D/PZT interface and provide solutions for developing high-performance ferroelectrics devices.
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http://dx.doi.org/10.1021/acsami.2c02277 | DOI Listing |
Materials (Basel)
December 2024
School of Physics and Electronic Information, Yan'an University, Yan'an 716000, China.
In this work, the rare earth element Ce was incorporated into the A-site of SrBaNbO ferroelectric ceramics, which was prepared using the conventional solid state reaction method and sintered under different procedures. A comprehensive investigation was conducted to assess the impact of Ce doping and varying sintering procedures on both the relaxor characteristics and electrical properties of the ceramics. When sintered at 1300 °C for 4 h, the grains exhibited an isometric shape.
View Article and Find Full Text PDFMolecules
December 2024
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China.
The advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(ZrTi)O-0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Hubei Longzhong Laboratory, Wuhan University of Technology, Xiangyang Demonstration Zone, Xiangyang 441000, China.
Materials with high crystallographic symmetry are supposed to be good thermoelectrics because they have high valley degeneracy () and superb carrier mobility (μ). Binary GeSe crystallizes in a low-symmetry orthorhombic structure accompanying the stereoactive 4s lone pairs of Ge. Herein, we rationally modify GeSe into a high-symmetry rhombohedral structure by alloying with GeTe based on the valence-shell electron-pair repulsion theory.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics, JC STEM Lab of Energy and Materials Physics, City University of Hong Kong, Hong Kong 999077, P. R. China.
Solid polymer electrolytes (SPEs) are promising candidates for lithium metal batteries (LMBs) owing to their safety features and compatibility with lithium metal anodes. However, the inferior ionic conductivity and electrochemical stability of SPEs hinder their application in high-voltage solid-state LMBs (HVSSLMBs). Here, a strategy is proposed to develop a dual-anion-rich solvation structure by implementing ferroelectric barium titanate (BTO) nanoparticles (NPs) and dual lithium salts into poly(vinylidene fluoride) (PVDF)-based SPEs for HVSSLMBs.
View Article and Find Full Text PDFSci Adv
January 2025
State Key Laboratory of Advanced Welding and Joining of Materials and Structures, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning of those properties has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due to the difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO thin films have been synthesized by reactive pulsed-laser deposition in a nitrogen growth atmosphere.
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