Consistent transmission of data from wireless neural devices is critical for monitoring the condition and performance of stimulation electrodes. To date, no wireless neural interface has demonstrated the ability to monitor the integrity of chronically implanted electrodes through wireless data transmission.In this work, we present a method for wirelessly recording the voltage transient (VT) response to constant-current, cathodic-first asymmetric pulsing from a microelectrode array. We implanted six wireless devices in rat sciatic nerve and wirelessly recorded VT measurements throughout a 38 week implantation period.Electrode maximum cathodic potential excursion (E), access voltage, and driving voltage (extracted from each VT) remained stable throughout the 38 week study period. Average E(from an applied +0.6 V interpulse bias) in response to 4.7A, 200.2s pulses was 267 ± 107 mV at week 1 post-implantation and 282 ± 52 mV at week 38 post-implantation. Access voltage for the same 4.7A pulsing amplitude was 239 ± 65 mV at week 1 post-implantation and 268 ± 139 mV at week 38 post-implantation.The VT response recorded via reverse telemetry from the wireless microelectrode array did not significantly change over a 38 week implantation period and was similar to previously reported VTs from wired microelectrodes with the same geometry. Additionally, the VT response recorded wirelessly in phosphate buffered saline before and after device implantation appeared as expected, showing significantly less electrode polarization and smaller access voltage than the VT response.
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http://dx.doi.org/10.1088/1741-2552/ac63ea | DOI Listing |
Stem Cell Res Ther
January 2025
Department of Cell Biology and Histology, University of the Basque Country UPV/EHU, Leioa, Bizkaia, 48940, Spain.
Background And Aim: Human dental pulp stem cells (hDPSCs) constitute a promising alternative for central nervous system (CNS) cell therapy. Unlike other human stem cells, hDPSCs can be differentiated, without genetic modification, to neural cells that secrete neuroprotective factors. However, a better understanding of their real capacity to give rise to functional neurons and integrate into synaptic networks is still needed.
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January 2025
Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, 208016, India.
Molecular electronics exhibiting resistive-switching memory features hold great promise for the next generation of digital technology. In this work, electrosynthesis of ruthenium polypyridyl nanoscale oligomeric films is demonstrated on an indium tin oxide (ITO) electrode followed by an ITO top contact deposition yielding large-scale (junction area = 0.7 × 0.
View Article and Find Full Text PDFSmall Methods
January 2025
Electric Mobility and Tribology Research Group, Council of Scientific and Industrial Research Central Mechanical Engineering Research Institute, Mahatma Gandhi Avenue, Durgapur, West Bengal, 713209, India.
Integration of different active sites by heterostructure engineering is pivotal to optimize the intrinsic activities of an oxygen electrocatalyst and much needed to enhance the performance of rechargeable Zn-air batteries (ZABs). Herein, a biphasic nanoarchitecture encased in in situ grown N-doped graphitic carbon (MnO/Co-NGC) with heterointerfacial sites are constructed. The density functional theory model reveals formation of lattice oxygen bridged heterostructure with pyridinic nitrogen atoms anchored Co species, which facilitate adsorption of oxygen intermediates.
View Article and Find Full Text PDFNanotechnology
January 2025
Department of Physics, Shanghai Jiao Tong University, 800 Dong Chuan Road, Minhang Area, Shanghai 200240, Shanghai, 200240, CHINA.
Both stability and multi-level switching are crucial performance aspects for resistive random-access memory (RRAM), each playing a significant role in improving overall device performance. In this study, we successfully integrate these two features into a single RRAM configuration by embedding Ag-nanoparticles (Ag-NPs) into the TiN/Ta2O5/ITO structure. The device exhibits substantially lower switching voltages, a larger switching ratio, and multi-level switching phenomena compared to many other nanoparticle-embedded devices.
View Article and Find Full Text PDFPhilos Trans A Math Phys Eng Sci
January 2025
Peter Gruenberg Institut (PGI-7), Forschungszentrum Juelich GmbH, Juelich, Germany.
The thirst for more efficient computational paradigms has reignited interest in computation in memory (CIM), a burgeoning topic that pivots on the strengths of more versatile logic systems. Surging ahead in this innovative milieu, multi-valued logic systems have been identified as possessing the potential to amplify storage density and computation efficacy. Notably, ternary logic has attracted widespread research owing to its relatively lower computational and storage complexity, offering a promising alternative to the traditional binary logic computation.
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