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Computationally efficient machine-learned model for GST phase change materials via direct and indirect learning.
J Chem Phys
January 2025
Department of Physics, Wesleyan University, Middletown, Connecticut 06459, USA.
Phase change materials such as Ge2Sb2Te5 (GST) are ideal candidates for next-generation, non-volatile, solid-state memory due to the ability to retain binary data in the amorphous and crystal phases and rapidly transition between these phases to write/erase information. Thus, there is wide interest in using molecular modeling to study GST. Recently, a Gaussian Approximation Potential (GAP) was trained for GST to reproduce Density Functional Theory (DFT) energies and forces at a fraction of the computational cost [Zhou et al.
View Article and Find Full Text PDFObservation of Large Low-Field Magnetoresistance in Layered (NdNiO):NdO Films at High Temperatures.
Adv Mater
January 2025
State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
Large low-field magnetoresistance (LFMR, < 1 T), related to the spin-disorder scattering or spin-polarized tunneling at boundaries of polycrystalline manganates, holds considerable promise for the development of low-power and ultrafast magnetic devices. However, achieving significant LFMR typically necessitates extremely low temperatures due to diminishing spin polarization as temperature rises. To address this challenge, one strategy involves incorporating Ruddlesden-Popper structures (ABO):AO, which are layered derivatives of perovskite structure capable of potentially inducing heightened magnetic fluctuations at higher temperatures.
View Article and Find Full Text PDFExploring the capabilities of 2-alkynyl aryl/benzyl azides: synthesis approaches for indoles, quinolines, and their derivatives transition metal catalysis.
RSC Adv
January 2025
The Organic Chemistry Research Laboratory (OCRL), Department of Chemistry, Faculty of Science, University of Zanjan Zanjan 45371-38791 Iran
In recent research, quinoline and indole structures have gained recognition for their significant clinical relevance and effectiveness. These compounds are known for their wide-ranging pharmacological effects, which include anticancer, antibacterial, antifungal, antiviral, and anti-inflammatory properties. Researchers have successfully implemented a variety of innovative synthetic strategies, leading to the creation of numerous compounds that display fascinating biological activities in diverse fields.
View Article and Find Full Text PDFIn-Plane Bulk Photovoltaic Effect in a MoSe/NbOI Heterojunction for Efficient Polarization-Sensitive Self-Powered Photodetection.
Nano Lett
January 2025
Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China.
Two-dimensional ferroelectric materials can generate a bulk photovoltaic effect, making them highly promising for self-powered photodetectors. However, their practical application is limited by a weak photoresponse due to a weak transition strength and wide band gap. In this study, we construct a van der Waals heterojunction using NbOI, which has significant in-plane polarization, with a highly absorbing MoSe layer.
View Article and Find Full Text PDFUltrafast Synthesis of Nanoscale Metal Borides for Efficient Hydrogen Evolution.
Angew Chem Int Ed Engl
January 2025
Wuhan University of Technology, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, CHINA.
Nanoscale metal borides, with exceptional physicochemical properties, have been attracted widespread attention. However, traditional synthesis methods of metal borides often lead to surface coking and large particle sizes. Herein, we have employed a flash Joule heating (FJH) technique to enable the ultrafast synthesis of metal boride nanomaterials.
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