AI Article Synopsis
- Negatively charged boron vacancies in hexagonal boron nitride (hBN) exhibit strong coherence properties, making them suitable for quantum technology applications.
- The Hahn-echo coherence of these defect spins achieves a decay time of 15 μs, close to the theoretical limit, and can be extended to 36 μs using a specific decoupling method.
- The coherence time is influenced by the interaction between the defect spins and nearby nitrogen nuclei, confirmed by calculations showing that this coupling remains stable even when transitioning from bulk to single layer hBN.
Article Abstract
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (V) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the V spin with a characteristic decay time = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the V spin with the three nearest N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.
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| http://dx.doi.org/10.1021/acs.nanolett.1c04610 | DOI Listing |
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