Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields of human activities [...].
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http://dx.doi.org/10.3390/mi13030403 | DOI Listing |
Sci Rep
January 2025
Department of Physics, Wolkite University, P. O. Box: 07, Wolkite, Ethiopia.
This study uses the Quantum ESPRESSO code to introduce Hubbard correction (U) to the density functional theory (DFT) in order to examine the effects of non-metals (C, F, N, and S) doping on the structural, electronic, and optical characteristics of rutile TiO. Rutile TiO is a substance that shows promise for use in renewable energy production, including fuels and solar energy, as well as environmental cleanup. Its wide bandgap, however, restricts their uses to areas with UV light.
View Article and Find Full Text PDFSmall Methods
January 2025
Center for Photonics Information and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China.
Wide-bandgap perovskite solar cells (PVSCs), a promising top-cell candidate for high-performance tandem solar cells, often suffer from larger open-circuit voltage (V) deficits as the bandgap increases. Surface passivation is a common strategy to mitigate these V deficits. However, understanding the mechanisms underlying the differences in passivation effects among various types of molecules remains limited, which is crucial for developing universal interface passivation strategies and guiding the design of passivation molecules.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Departamento de Química Orgánica, Universidad de Zaragoza, 50009 Zaragoza, Spain.
Dye-sensitization is a promising strategy to improve the light absorption and photoactivity abilities of wide-bandgap semiconductors, like TiO. For effective water-splitting photoanodes with no sacrificial agents, the electrochemical potential of the dye must exceed the thermodynamic threshold needed for the oxygen evolution reaction. This study investigates two promising organic cyanoacrylic dyes, designed to meet that criterion by means of theoretical calculations.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Department of Civil Engineering, University of Texas Rio Grande Valley, Edinburg, TX 78539, USA.
This paper focuses on the theoretical and analytical modeling of a novel seismic isolator termed the Passive Friction Mechanical Metamaterial Seismic Isolator (PFSMBI) system, which is designed for seismic hazard mitigation in multi-story buildings. The PFSMBI system consists of a lattice structure composed of a series of identical small cells interconnected by layers made of viscoelastic materials. The main function of the lattice is to shift the fundamental natural frequency of the building away from the dominant frequency of earthquake excitations by creating low-frequency bandgaps (FBGs) below 20 Hz.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I/I ratio of more than seven orders of magnitude, with I reaching up to 2.
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