Tin bisulfide nanoplates anchored onto flower-like bismuth tungstate nanosheets for enhancement in the photocatalytic degradation of organic pollutant.

J Hazard Mater

Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, Guangzhou 510642, China. Electronic address:

Published: June 2022

The development of efficient heterojunctions through a simple and facile method is an effective way to enhance the photocatalytic performance of bismuth-based oxide semiconductors for industrial applications. Here, the novel flower-like type II SnS/BiWO heterostructure consisting of bismuth tungstate (BiWO) nanosheets and tin bisulfide (SnS) nanoplates was successfully designed and synthesized. The crystal structure, composition, morphology, and photoelectric properties of the heterostructure were systematically characterized. In addition, the photocatalytic activity of SnS/BiWO was analyzed and compared with BiWO or SnS alone or physical mixture of SnS and BiWO. 2%SnS/BiWO presents a 3.1 times greater degradation rate constant (0.0065 min) than that of BiWO (0.0021 min) under low visible light irradiation (5.3 mW·cm, a 44 W LED), while SnS alone exhibits no photocatalytic effect toward glyphosate. Furthermore, 2%SnS/BiWO maintains 93% of its original photocatalytic activity even after four cycles. The possible photocatalytic degradation pathway of glyphosate and photocatalytic mechanism are also proposed. The excellent photocatalytic performance of SnS/BiWO is attributed to the decoration of SnS nanoplates on the surface of BiWO, appropriate (113)/(020) ratio, increased visible-light absorption, and effective separation of photoinduced carriers. This paper reports a new methodology that can act as a reference basis to design and develop visible-light responsive photocatalysts with outstanding photocatalytic performance for carbon dioxide reduction, water splitting, and pollutant degradation.

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Source
http://dx.doi.org/10.1016/j.jhazmat.2022.128665DOI Listing

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