AI Article Synopsis
- - The paper analyzes experimental results related to the dynamic breakdown voltage and electrical breakdown time delay of a xenon-filled diode, focusing on how these factors behave under different conditions.
- - Measurements were taken with and without gamma radiation exposure at a dose rate of 7.7⋅10 C/(kg⋅s), highlighting the stochastic nature of the breakdown characteristics.
- - The study also estimated static breakdown voltage as it relates to dynamic breakdown voltage and evaluated the fit of specific statistical distributions to the experimental data.
Article Abstract
This paper presents a detailed statistical analysis of experimental results of dynamic breakdown voltage and electrical breakdown time delay for xenon-filled diode. These quantities have a stochastic nature and they were measured in the cases when the xenon-filled diode was and was not exposed to a gamma radiation source, with exposure dose rate 7.7⋅10 C/(kg⋅s). The static breakdown voltage was estimated based on dynamic breakdown voltage as a function of voltage increase rate. The applicability of certain distributions to experimental dynamic breakdown voltage and electrical breakdown time delay data was also analyzed.
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| http://dx.doi.org/10.1016/j.apradiso.2022.110207 | DOI Listing |
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