AI Article Synopsis
- Ni-doped LaO was created as an ionic conducting membrane with a high conductivity of 0.187 S cm at 550 °C, achieving a peak power density of 970 mW cm and an open circuit voltage of 1.05 V using 10 mol% Ni doping.
- Investigations using XPS and Raman techniques show that improved performance is linked to increased oxygen vacancies in the material.
- Density functional theory confirms that Ni doping adjusts the band structure of LaO, enhancing its electrochemical properties while a Schottky junction barrier at the anode helps prevent short circuits and improve ionic transport.
Article Abstract
Ni-doped LaO was developed as an ionic conducting membrane corresponding to a conductivity of 0.187 S cm at 550 °C. A peak power density of 970 mW cm with an open circuit voltage of 1.05 V was achieved using 10 mol% Ni-doped LaO (10NLO). XPS and Raman investigations reveal that the performance enhancement is due to the high concentration of oxygen vacancies. Density functional theory calculations verify that Ni doping can tune the band structure of LaO to enhance its electrochemical performance. A Schottky junction barrier is formed at the anode to avoid short circuit problems and facilitate the ionic transportation at the anode/electrolyte interface. This study indicates that wide-band gap semiconductors with suitable element-doping can be tuned to be promising ionic conductors for advanced fuel cell applications.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1039/d1cc07183a | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!