Neuromorphic engineering aims to build (autonomous) systems by mimicking biological systems. It is motivated by the observation that biological organisms-from algae to primates-excel in sensing their environment, reacting promptly to their perils and opportunities. Furthermore, they do so more resiliently than our most advanced machines, at a fraction of the power consumption. It follows that the performance of neuromorphic systems should be evaluated in terms of real-time operation, power consumption, and resiliency to real-world perturbations and noise using task-relevant evaluation metrics. Yet, following in the footsteps of conventional machine learning, most neuromorphic benchmarks rely on recorded datasets that foster sensing accuracy as the primary measure for performance. Sensing accuracy is but an arbitrary proxy for the actual system's goal-taking a good decision in a timely manner. Moreover, static datasets hinder our ability to study and compare closed-loop sensing and control strategies that are central to survival for biological organisms. This article makes the case for a renewed focus on closed-loop benchmarks involving real-world tasks. Such benchmarks will be crucial in developing and progressing neuromorphic Intelligence. The shift towards dynamic real-world benchmarking tasks should usher in richer, more resilient, and robust artificially intelligent systems in the future.
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http://dx.doi.org/10.3389/fnins.2022.813555 | DOI Listing |
Adv Sci (Weinh)
January 2025
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Flexible memristors are promising candidates for multifunctional neuromorphic computing applications, overcoming the limitations of conventional computing devices. However, unpredictable switching behavior and poor mechanical stability in conventional memristors present significant challenges to achieving device reliability. Here, a reliable and flexible memristor using zirconium-oxo cluster (ZrOOH(OMc)) as the resistive switching layer is demonstrated.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Ferroelectric HfZrO (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance and capacitance states in ferroelectric HZO have been proposed for vector-matrix multiplication (VMM), but previous approaches suffer from limited accuracy and reliability. In this work, we propose a promising approach centered on the remanent polarization (P) switching of binary ferroelectric HZO capacitor synapses.
View Article and Find Full Text PDFNanotechnology
January 2025
Kwangwoon University, 20 Kwangwoonro Nowon-Gu Seoul, Nowon-gu, 01897, Korea (the Republic of).
To implement a neuromorphic computing system capable of efficiently processing vast amounts of unstructured data, a significant number of synapse and neuron devices are needed, resulting in increased area demands. Therefore, we developed a nanoscale vertically structured synapse device that supports high-density integration. To realize this synapse device, the interface effects between the resistive switching layer and the electrode were investigated and utilized.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
Research on memristive devices to seamlessly integrate and replicate the dynamic behaviors of biological synapses will illuminate the mechanisms underlying parallel processing and information storage in the human brain, thereby affording novel insights for the advancement of artificial intelligence. Here, an artificial electric synapse is demonstrated on a one-step Mo-selenized MoSe memristor, having not only long-term stable resistive switching characteristics (reset 0.51 ± 0.
View Article and Find Full Text PDFSmall Methods
January 2025
Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, 208016, India.
Molecular electronics exhibiting resistive-switching memory features hold great promise for the next generation of digital technology. In this work, electrosynthesis of ruthenium polypyridyl nanoscale oligomeric films is demonstrated on an indium tin oxide (ITO) electrode followed by an ITO top contact deposition yielding large-scale (junction area = 0.7 × 0.
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