Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS/Metal Schottky Barriers.

Weaker Fermi level pinning (FLP) at the Schottky barriers of 2D semiconductors is electrically desirable as this would allow a minimizing of contact resistances, which presently limit device performances. Existing contacts on MoS have a strong FLP with a small pinning factor of only ∼0.1. Here, we show that Moire interfaces can stabilize physisorptive sites at the Schottky barriers with a much weaker interaction without significantly lengthening the bonds. This increases the pinning factor up to ∼0.37 and greatly reduces the n-type Schottky barrier height to ∼0.2 eV for certain metals such as In and Ag, which can have physisorptive sites. This then accounts for the low contact resistance of these metals as seen experimentally. Such physisorptive interfaces can be extended to similar systems to better control SBHs in highly scaled 2D devices.