For proper operation in real industrial conditions, gas sensors require readout circuits which offer accuracy, noise robustness, energy efficiency and portability. We present an innovative, dedicated readout circuit with a phase locked loop (PLL) architecture for SiC-MOS capacitor sensors. A hydrogen detection system using this circuit is designed, simulated, implemented and tested. The PLL converts the MOS nonlinear small-signal capacitance (affected by hydrogen) into an output voltage proportional to the detected gas concentration. Thus, the MOS sensing element is part of the PLL's voltage-controlled oscillator. This block effectively provides a small AC signal (around 70 mV at 1 MHz) for the sensor and acquires its response. The correct operation of the proposed readout circuit is validated by simulations and experiments. Hydrogen measurements are performed for concentrations up to 1600 ppm. The PLL output exhibited voltage variations close to those discernable from experimental C-V curves, acquired with a semiconductor characterization system, for all investigated MOS sensor samples.
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http://dx.doi.org/10.3390/s22041462 | DOI Listing |
Sci Rep
December 2024
School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore.
The outstanding performance of superconducting nanowire single-photon detectors (SNSPDs) has expanded their application areas from quantum technologies to astronomy, space communication, imaging, and LiDAR. As a result, there has been a surge in demand for these devices, that commercial products cannot readily meet. Consequently, more research and development efforts are being directed towards establishing in-house SNSPD manufacturing, leveraging existing nano-fabrication capabilities that can be customized and fine-tuned for specific needs.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, ul. Grudziądzka, 5, 87-100 Toruń, Poland.
In this work, we present an experimental approach for monitoring the temperature of submicrometric, real-time operating electrical circuits using luminescence thermometry. For this purpose, we utilized lanthanide-doped up-converting nanocrystals as nanoscale temperature probes, which, combined with a highly sensitive confocal photoluminescence microscope, enabled temperature monitoring with spatial resolution limited only by the diffraction of light. To validate our concept, we constructed a simple model of an electrical microcircuit based on a single silver nanowire with a diameter of approximately 100 nm and a length of about 50 µm, whose temperature increase was induced by electric current flow.
View Article and Find Full Text PDFMicrosyst Nanoeng
December 2024
State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.
A differential microelectromechanical system (MEMS) quartz resonant accelerometer with a novel oscillating readout circuit is proposed. The phase noise in a piezoelectric quartz resonant accelerometer has been systematically investigated. A high-performance front-end is used to extract the motional charge from a piezoelectric quartz resonator for the first time.
View Article and Find Full Text PDFACS Nano
December 2024
Interuniversity Microelectronics Center (imec), Leuven 3001, Belgium.
Thin film photodiodes (TFPD) can supplement complementary metal-oxide-semiconductor (CMOS) image sensor vision by their exotic optoelectronic properties assisted by their monolithic processability. Halide perovskites are known to show outstanding optoelectronic properties, such as large absorption coefficient, long carrier diffusion lengths, and high carrier mobility, leading to high external quantum efficiency (EQE) and fast charge transport in photodiodes (PDs), especially compared with other thin-film photodiode candidates. In this paper, high-resolution two-dimensional (2D) and three-dimensional (3D) imaging capabilities are demonstrated using perovskite photodetection material with a silicon (Si) read-out integrated circuit (ROIC).
View Article and Find Full Text PDFSensors (Basel)
November 2024
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institution of Nuclear Technology, Xi'an 710024, China.
Complementary Metal-Oxide-Semiconductor (CMOS) image sensors (CISs), known for their high integration, low cost, and superior performance, have found widespread applications in satellite and space exploration. However, the readout circuits of pixel arrays are vulnerable to functional failures in complex or intense radiation environments, particularly due to transient γ radiation. Using Technology Computer-Aided Design (TCAD) device simulations and Simulation Program with Integrated Circuit Emphasis (SPICE) circuit simulations, combined with a double-exponential current source fault injection method, this study investigates the transient dose rate effect (TDRE) on a typical readout circuit of CISs.
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