We present a bias-free photoconductive emitter that uses an array of nanoantennas on an InGaAs layer with a linearly graded Indium composition. The graded InGaAs structure creates a built-in electric field that extends through the entire photoconductive active region, enabling the efficient drift of the photo-generated electrons to the nanoantennas. The nanoantenna geometry is chosen so that surface plasmon waves are excited in response to a 1550 nm optical pump to maximize photo-generated carrier concentration near the nanoantennas, where the built-in electric field strength is maximized. With the combination of the plasmonic enhancement and built-in electric field, high-power terahertz pulses are generated without using any external bias voltage. We demonstrate the generation of terahertz pulses with 860 µW average power at an average optical pump power of 900 mW, exhibiting the highest radiation power compared to previously demonstrated telecommunication-compatible terahertz pulse emitters.
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| http://dx.doi.org/10.1364/OE.447733 | DOI Listing |
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