Thin-film strain sensors are widely used because of their small volume, fast strain response and high measurement accuracy. Among them, the thin-film material and preparation process of thin-film strain sensors for force measurement are important aspects. In this paper, the preparation process parameters of the transition layer, insulating layer and Ni-Cr alloy layer in a thin-film strain sensor are analyzed and optimized, and the influence of each process parameter on the properties of the thin film are discussed. The surface microstructure of the insulating layer with AlO or SiN transition layers and the film without transition layer were observed by atomic force microscopy. It is analyzed that adding a transition layer between the stainless steel substrate and insulation layer can improve the adhesion and flatness of the insulation layer. The effects of process parameters on elastic modulus, nanohardness and strain sensitivity coefficient of the Ni-Cr resistance layer are discussed, and electrical parameters such as the resistance strain coefficient are analyzed and characterized. The static calibration of the thin-film strain sensor is carried out, and the relationship between the strain value and the output voltage is obtained. The results show that the thin-film strain sensor can obtain the strain generated by the cutting tool and transform it into an electrical signal with good linearity through the bridge, accurately measuring the cutting force.
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http://dx.doi.org/10.3390/mi13020310 | DOI Listing |
Nanoscale
January 2025
Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China.
Two-dimensional materials with a combination of a moderate bandgap, highly anisotropic carrier mobility, and a planar structure are highly desirable for nanoelectronic devices. This study predicts a planar BeP monolayer with hexagonal symmetry that meets the aforementioned desirable criteria using the CALYPSO method and first-principles calculations. Calculations of electronic properties demonstrate that the hexagonal BeP monolayer is an intrinsic semiconductor with a direct band gap of approximately 0.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China.
The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays. However, thin-film perovskites with inhomogeneous spatial distribution of light emission and unstable surface under lithography are incompatible with the micro-LED devices.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
Enhancing both strength and plasticity simultaneously in nanostructured materials remains a significant challenge. While grain refinement is effective in increasing strength, it typically leads to reduced plasticity due to localized strain. In this study, we propose a novel design strategy featuring a dual-nano composite structure with grain boundary segregation to enhance the deformation stability of nanostructured materials.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.
Controlling the Mott transition through strain engineering is crucial for advancing the development of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of microscopic distortions on the local Mott transition. Here, using a synchrotron-based scanning X-ray nanoprobe, we studied the real-space structural heterogeneity during the structural phase transition in a VO thin film.
View Article and Find Full Text PDFACS Mater Au
January 2025
Christian Doppler Laboratory for Soft Structures for Vibration Isolation and Impact Protection (ADAPT), School of Education, STEM Education, Johannes Kepler University Linz, 4040 Linz, Austria.
Soft materials play a pivotal role in the efficacy of stretchable electronics and soft robotics, and the interface between the soft devices and rigid counterparts is especially crucial to the overall performance. Herein, we develop polyimide-polydimethylsiloxane (PI-PDMS) copolymers that, in various ratios, combine on a molecular level to give a series of chemically similar materials with an extremely wide Young's modulus range starting from soft 2 MPa and transitioning to rigid polymers with up to 1500 MPa. Of particular significance is the copolymers' capacity to prepare seamless stiffness gradients, as evidenced by strain distribution analyses of gradient materials, due to them being unified on a molecular level.
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