Hybrid perovskite photovoltaics combine high performance with the ease of solution processing. However, to date, a poor understanding of morphology formation in coated perovskite precursor thin films casts doubt on the feasibility of scaling-up laboratory-scale solution processes. Oblique slot jet drying is a widely used scalable method to induce fast crystallization in perovskite thin films, but deep knowledge and explicit guidance on how to control this dynamic method are missing. In response, we present a quantitative model of the drying dynamics under oblique slot jets. Using this model, we identify a simple criterion for successful scaling of perovskite solution printing and predict coating windows in terms of air velocity and web speed for reproducible fabrication of perovskite solar cells of ∼15% in power conversion efficiency─in direct correlation with the morphology of fabricated thin films. These findings are a corner stone toward scaling perovskite fabrication from simple principles instead of trial and error optimization.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acsami.1c22363DOI Listing

Publication Analysis

Top Keywords

thin films
16
perovskite thin
8
oblique slot
8
scaling perovskite
8
perovskite
7
thin
5
drying coating
4
coating perovskite
4
films
4
films control
4

Similar Publications

Vanadium dioxide ([Formula: see text]) is a favorable material platform of modern optoelectronics, since it manifests the reversible temperature-induced insulator-metal transition (IMT) with an abrupt and rapid changes in the conductivity and optical properties. It makes possible applications of such a phase-change material in the ultra-fast optoelectronics and terahertz (THz) technology. Despite the considerable interest to this material, data on its broadband electrodynamic response in different states are still missing in the literature.

View Article and Find Full Text PDF

Low Temperature Atomic Layer Deposition of (00l)-Oriented Elemental Bismuth.

Angew Chem Int Ed Engl

January 2025

Leibniz-Institut fur Festkorper- und Werkstoffforschung Dresden eV, Helmholtzstraße 20, 01069, Dresden, GERMANY.

This study presents the first successful demonstration of growing elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 as the precursor and Sb(SiMe3)3 as the co-reactant. The films were deposited at a relatively low temperature of 100 °C, with a growth per cycle (GPC) of 0.31-0.

View Article and Find Full Text PDF

Enhancing the ferroelectric performance of HfZrOfilms by optimizing the incorporation of Al dopant.

Nanotechnology

January 2025

School of Electrical Engineering, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xianning West Road No.28 Xi'an Shannxi Province, Xi'an, Shaanxi, 710049, CHINA.

HfO-based ferroelectric (FE) thin films have gained considerable interest for memory applications due to their excellent properties. However, HfO₂-based FE films face significant reliability challenges, especially the wake-up and fatigue effects, which hinder their practical application. In this work, we fabricated 13.

View Article and Find Full Text PDF

The development of chiral organic materials with strong non-reciprocal chiroptical features may have major implications for cutting-edge technological applications. In this work, a new synthesized chiral 1,4-diketo-3,6-dithienylpyrrolo[3,4-]pyrrole dye, bearing two ()-3,7-dimethyl-1-octyl alkyl chains on the lactam moieties and functionalized with two lateral 9-anthracenyl π-conjugated units, exhibited strong non-reciprocal chiroptical properties in thin films, with some important differences between samples prepared by drop casting and spin coating. A detailed study was performed to unravel the intimate structure-property relationship, involving computational analysis, different microscopy techniques and synchrotron radiation Mueller matrix polarimetry imaging (SR-MMP) investigation.

View Article and Find Full Text PDF

: active learning in neutron reflectometry for fast data acquisition.

J Appl Crystallogr

January 2024

NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland, USA.

Neutron reflectometry (NR) is a powerful technique for interrogating the structure of thin films at interfaces. Because NR measurements are slow and instrument availability is limited, measurement efficiency is paramount. One approach to improving measurement efficiency is active learning (AL), in which the next measurement configurations are selected on the basis of information gained from the partial data collected so far.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!