AI Article Synopsis

  • Doped semiconductor nanocrystal thin films are used in various applications like screens, electrochromic windows, LEDs, and solar cells.
  • Spectroscopic ellipsometry was used to assess and model the dielectric properties of indium tin oxide films created through nanocrystal deposition and sintering.
  • The modeling indicates that the films can be analyzed as Bruggemann effective media, which helps estimate their nanoscale porosity and suggests that the dielectric constants can be adjusted to manipulate plasma frequency and other properties.

Article Abstract

Doped semiconductor nanocrystal-based thin films are widely used for many applications, such as screens, electrochromic windows, light emitting diodes, and solar cells. Herein, we have employed spectroscopic ellipsometry to measure and model the complex dielectric response of indium tin oxide films fabricated by nanocrystal deposition and sintering. The films could be modelled as Bruggemann effective media, allowing estimation of the nanoscale interstitial porosity of the structure. The effective dielectric constants show the possibility of tuning the plasma frequency and the epsilon-near zero condition of the film.

Download full-text PDF

Source
http://dx.doi.org/10.1039/d1cp05897eDOI Listing

Publication Analysis

Top Keywords

indium tin
8
tin oxide
8
effective medium
4
medium optical
4
optical modelling
4
modelling indium
4
oxide nanocrystal
4
films
4
nanocrystal films
4
films doped
4

Similar Publications

Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring TCOs. However, no promising industrial solution has been obtained yet.

View Article and Find Full Text PDF

Endurable IGZO/SnS/IGZO Heterojunction Phototransistor Arrays for Image Sensors.

ACS Appl Mater Interfaces

January 2025

School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.

Optoelectronic devices require stable operation to detect repetitive visual information. In this study, endurable arrays based on heterojunction phototransistors composed of indium-gallium-zinc oxide (IGZO) with a low dark current and tin sulfide (SnS) capable of absorbing visible light are developed for image sensors. The tandem structure of IGZO/SnS/IGZO (ISI) enables stable operation under repetitive exposure to visible light by improving the transport ability of the photoexcited carriers through mitigated trap sites and their separation into each IGZO layer.

View Article and Find Full Text PDF

A label-free electrochemical biosensor for sensitive analysis of the PARP-1 activity.

Bioelectrochemistry

December 2024

School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China. Electronic address:

Early diagnosis of tumors is becoming increasingly important in modern healthcare. As studies have demonstrated, Poly(ADP)ribose polymerase-1 (PARP-1) is overexpressed in more aggressive tumors. Consequently, sensitive detection of PARP-1 activity holds significant practical importance in clinical diagnostics and biomedical research.

View Article and Find Full Text PDF

A Review of Transparent Conducting Films (TCFs): Prospective ITO and AZO Deposition Methods and Applications.

Nanomaterials (Basel)

December 2024

Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.

This study offers a comprehensive summary of the current states as well as potential future directions of transparent conducting oxides (TCOs), particularly tin-doped indium oxide (ITO), the most readily accessible TCO on the market. Solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), antireflection (AR) coatings for airbus windows, photovoltaic and optoelectronic devices, transparent p-n junction diodes, etc. are a few of the best uses for this material.

View Article and Find Full Text PDF

A solution-gated indium-tin-oxide (ITO)-based field effect transistor (FET) without interfaces among the source, channel, and drain electrodes, which is called the one-piece ITO-FET, can be simply fabricated from a single sheet of ITO by etching the channel region. The direct contact of the ITO channel surface with a sample solution contributes to a steep subthreshold slope and a high on/off ratio. In this study, we have examined the effects of oxygen vacancies and hydroxy groups at the ITO channel surface on the electrical characteristics of the one-piece ITO-FET.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!