AI Article Synopsis

  • The study focuses on the formation of 2-dimensional electron gases (2DEGs) in BaSnO-based heterostructures, aiming for high mobility at room temperature for use in oxide electronics.
  • It reports a remarkable room-temperature mobility of 60 cm²/Vs at a carrier concentration of 1.7 × 10²⁰ cm⁻³ at the LaScO/BaSnO interface, significantly higher than previous SrTiO-based 2DEGs.
  • The researchers achieved this by using a thick BaSnO buffer layer and a high-temperature treatment to reduce dislocation density and create an atomically flat surface, paving the way for advancements in stannate-based 2DEG applications in

Article Abstract

The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO -based heterostructures. Here, 2DEG formation at the LaScO /BaSnO (LSO/BSO) interface with a room-temperature mobility of 60 cm  V  s at a carrier concentration of 1.7 × 10  cm is reported. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO -based 2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO -terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak beam dark-field transmission electron microscopy imaging and in-line electron holography technique, a reduction of the threading dislocation density is revealed, and direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9036036PMC
http://dx.doi.org/10.1002/advs.202105652DOI Listing

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