AI Article Synopsis
- Zinc phosphide (ZnP) is a promising semiconductor for solar energy, made from abundant elements, which could provide alternatives to traditional silicon solar cells.
- A study investigates the optical properties of single crystalline ZnP thin films, revealing they are slightly rich in phosphorus and highlighting two significant pathways for radiative recombination.
- The first pathway occurs at about 1.52 eV due to band-to-band transitions, while the second occurs between 1.3 eV and 1.4 eV, likely caused by defect states related to phosphorus interstitials.
Article Abstract
Zinc phosphide, ZnP, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth's crust, opening up a pathway for large deployment of solar cell alternatives to the silicon market. Here we provide a thorough study of the optical properties of single crystalline ZnP thin films grown on (100) InP by molecular beam epitaxy. The films are slightly phosphorus-rich as determined by Rutherford backscattering. We elucidate two main radiative recombination pathways: one transition at approximately 1.52 eV attributed to zone-center band-to-band electronic transitions; and a lower-energy transition observed at 1.3 eV to 1.4 eV attributed to a defect band or band tail related recombination mechanisms. We believe phosphorus interstitials are likely at the origin of this band.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8784961 | PMC |
| http://dx.doi.org/10.1039/d1ma00922b | DOI Listing |
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