TiO offers several advantages over graphite as an anode material for Li-ion batteries (LIBs) but suffers from low electrical conductivity and Li-diffusion issues. Control over defect chemistry has proven to be an effective strategy to overcome these issues. However, defect engineering has primarily been focused on oxygen vacancies (V). The role of another intrinsic TiO vacancy [i.e., titanium vacancies (V)] with regard to the Li storage behavior of TiO has largely evaded attention. Hence, a comparison of V- and V-defective TiO can provide valuable insight into how these two types of defects affect Li storage behavior. To eliminate other factors that may also affect the Li storage behavior of TiO, we carefully devised synthesis protocols to prepare TiO with either V (n-TiO) or V (p-TiO). Both TiO materials were verified to have a very similar morphology, surface area, and crystal structure. Although V provided additional sites that improved the capacity at low C-rates, the benefit obtained from over-lithiation turned out to be detrimental to cycling stability. Unlike V, V could not serve as an additional lithium reservoir but could significantly improve the rate performance of TiO. More importantly, the presence of V prevented over-lithiation, significantly improving the cycling stability of TiO. We believe that these new insights could help guide the development of high-performance TiO for LIB applications.
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http://dx.doi.org/10.1021/acsami.1c20265 | DOI Listing |
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January 2025
SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751 005, India.
Understanding the resistive switching (RS) behavior of oxide-based memory devices at nanoscale is crucial for advancement of high-integration density in-memory computing platforms. This study explores a comprehensive growth parameter space to address the RS behavior of pulsed-laser-deposited substoichiometric TiO (TiO) thin films in search of tailored nanoscale memristors with low-power consumption and high stability. Conductive-atomic-force-microscopy-based measurements facilitate deciphering the switching behavior at nanoscale, providing a direct avenue to understand the microstructure-property relationships.
View Article and Find Full Text PDFNanoscale
January 2025
Physics Department E20, School of Natural Sciences, Technical University of Munich, Garching, 85748, Germany.
-Armchair graphene nanoribbons (nAGNRs) are promising components for next-generation nanoelectronics due to their controllable band gap, which depends on their width and edge structure. Using non-metal surfaces for fabricating nAGNRs gives access to reliable information on their electronic properties. We investigated the influence of light and iron adatoms on the debromination of 4,4''-dibromo--terphenyl precursors affording poly(-phenylene) (PPP as the narrowest GNR) wires through the Ullmann coupling reaction on a rutile TiO(110) surface, which we studied by scanning tunneling microscopy and X-ray photoemission spectroscopy.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Shanxi Coal International Energy Group Co., Ltd., Taiyuan 030000, China.
Photocatalytic reduction of CO will play a major role in future energy and environmental crisis. To investigate the adsorption mechanisms of CO and HO molecules involved in the catalytic process on the surface of anatase titanium dioxide 101 (TiO(101)) and the influence of Au atom doping on their adsorption, first-principles density functional theory calculations were used. The results show that 1.
View Article and Find Full Text PDFNanoscale Adv
January 2025
Université de Lorraine, CNRS, LRGP F-54000 Nancy France
Water-dispersible core/shell CuInZnSe/ZnS (CIZSe/ZnS) quantum dots (QDs) were efficiently synthesized under microwave irradiation using -acetylcysteine (NAC) and sodium citrate as capping agents. The photoluminescence (PL) emission of CIZSe/ZnS QDs can be tuned from 593 to 733 nm with varying the Zn : Cu molar ratio in the CIZSe core. CIZSe/ZnS QDs prepared with a Zn : Cu ratio of 0.
View Article and Find Full Text PDFHeliyon
January 2025
Department of Mechanical Engineering, Central Tehran Branch, Islamic Azad University, Tehran, Iran.
Background: The development of heat transfer devices used for heat conversion and recovery in several industrial and residential applications has long focused on improving heat transfer between two parallel plates. Numerous articles have examined the relevance of enhancing thermal performance for the system's performance and economics. Heat transport is improved by increasing the Reynolds number as the turbulent effects grow.
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