AI Article Synopsis
- Additives are essential for the performance of perovskite light-emitting diodes (PeLEDs), and the study introduces a new molecular additive (PE-TPPO) that has dual functions.
- The additive helps in both passivating defects in the perovskite material and increasing the efficiency of the light emission process by boosting electron capture.
- As a result, PeLEDs using this additive achieve impressive efficiency metrics, indicating their potential for advanced applications in optoelectronics.
Article Abstract
Additives play a critical role for efficient perovskite light-emitting diodes (PeLEDs). Here, we report a novel phosphonate/phosphine oxide dyad molecular additive (PE-TPPO), with unique dual roles of passivating defects and enhancing carrier radiative recombination, to boost the device efficiency of metal-halide perovskites. In addition to the defect passivation effect of the phosphine oxide group to enhance the photoluminescence intensity and homogeneity of perovskite film, the phosphonate group with strong electron affinity can capture the injected electrons to increase local carrier concentration and accelerate the carrier radiative recombination in the electroluminescence process. Owing to their synergistic enhancement on device efficiency, quasi-two-dimensional green PeLEDs modified by this dyad additive exhibit a maximum external quantum efficiency, current efficiency, and power efficiency of 25.1 %, 100.5 cd A , and 98.7 lm W , respectively, which are among the reported state-of-the-art efficiencies.
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| http://dx.doi.org/10.1002/anie.202117374 | DOI Listing |
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Article Synopsis
- Additives are essential for the performance of perovskite light-emitting diodes (PeLEDs), and the study introduces a new molecular additive (PE-TPPO) that has dual functions.
- The additive helps in both passivating defects in the perovskite material and increasing the efficiency of the light emission process by boosting electron capture.
- As a result, PeLEDs using this additive achieve impressive efficiency metrics, indicating their potential for advanced applications in optoelectronics.
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