Thin-film composite membranes formed by conventional interfacial polymerization generally suffer from the depth heterogeneity of the polyamide layer, i.e., nonuniformly distributed free volume pores, leading to the inefficient permselectivity. Here, we demonstrate a facile and versatile approach to tune the nanoscale homogeneity of polyamide-based thin-film composite membranes via inorganic salt-mediated interfacial polymerization process. Molecular dynamics simulations and various characterization techniques elucidate in detail the underlying molecular mechanism by which the salt addition confines and regulates the diffusion of amine monomers to the water-oil interface and thus tunes the nanoscale homogeneity of the polyamide layer. The resulting thin-film composite membranes with thin, smooth, dense, and structurally homogeneous polyamide layers demonstrate a permeance increment of ~20-435% and/or solute rejection enhancement of ~10-170% as well as improved antifouling property for efficient reverse/forward osmosis and nanofiltration separations. This work sheds light on the tunability of the polyamide layer homogeneity via salt-regulated interfacial polymerization process.
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http://dx.doi.org/10.1038/s41467-022-28183-1 | DOI Listing |
Polymers (Basel)
December 2024
Department of Chemical and Biological Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-Gu, Seongnam-Si 13120, Gyeonggi-do, Republic of Korea.
Si anode materials are promising candidates for next-generation Li-ion batteries (LIBs) because of their high capacities. However, expansion and low conductivity result in rapid performance degradation. Herein, we present a facile one-pot method for pyrolyzing polystyrene sulfonate (PSS) polymers at low temperatures (≤400 °C) to form a thin carbonaceous layer on the silicon surface.
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December 2024
Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory, 1, 119991 Moscow, Russia.
The scope of this work was to develop a thin-film composite (TFC) membrane for the separation of CO/CO mixtures, which are relevant for many processes of gas processing and gasification of carbon-based feedstock. Special attention was given to the development of highly permeable porous polysulfone (PSF) supports (more than 26,000 GPU for CO) since both the selective and support layers contribute significantly to the overall performance of the TFC membrane. The PSF porous support is widely used in commercial and lab-scale TFC membranes, and its porous structure and other exploitation parameters are set during the non-solvent-induced phase separation (NIPS) process.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
Shenyang Academy of Instrumentation Science, Shenyang 110043, China.
Thermal treatment is a common method to improve the properties of optical thin films, but improper thermal treatment processing will result in the degradation of the optical properties of the optical thin film. The thermal stability of niobium oxide (NbO) thin films prepared by magnetron sputtering was systematically studied by analyzing the roughness and morphology of the film under different thermal treatment processes. The results show that the amorphous stability of the NbO thin film can be maintained up to 400 °C.
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December 2024
Institute of Nuclear Physics Polish Academy of Sciences, 31-342 Krakow, Poland.
The resistivity of the silica SBA-15 type can be significantly improved by forming a thin layer of carbon on the pore surface. This is possible through the carbonization reaction of a surfactant used as a structure-directing agent in the synthesis of mesostructured silica materials. The synthesis of this type of silica-carbon composite (SBA-C) is based on the use of sulfuric acid to create a carbon layer from surfactant molecules encapsulated in silica mesopores.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Department of Computer Information Science, Korea University, Sejong 30019, Republic of Korea.
Inductively coupled plasma-reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according to radiofrequency bias power, gas mixing ratio, and chamber pressure. The IGZO film showed an excellent etch rate of 83.
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