Van der Waals (vdW) solids can be engineered with atomically precise vertical composition through the assembly of layered two-dimensional materials. However, the artisanal assembly of structures from micromechanically exfoliated flakes is not compatible with scalable and rapid manufacturing. Further engineering of vdW solids requires precisely designed and controlled composition over all three spatial dimensions and interlayer rotation. Here, we report a robotic four-dimensional pixel assembly method for manufacturing vdW solids with unprecedented speed, deliberate design, large area and angle control. We used the robotic assembly of prepatterned 'pixels' made from atomically thin two-dimensional components. Wafer-scale two-dimensional material films were grown, patterned through a clean, contact-free process and assembled using engineered adhesive stamps actuated by a high-vacuum robot. We fabricated vdW solids with up to 80 individual layers, consisting of 100 × 100 μm areas with predesigned patterned shapes, laterally/vertically programmed composition and controlled interlayer angle. This enabled efficient optical spectroscopic assays of the vdW solids, revealing new excitonic and absorbance layer dependencies in MoS. Furthermore, we fabricated twisted N-layer assemblies, where we observed atomic reconstruction of twisted four-layer WS at high interlayer twist angles of ≥4°. Our method enables the rapid manufacturing of atomically resolved quantum materials, which could help realize the full potential of vdW heterostructures as a platform for novel physics and advanced electronic technologies.
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Article Synopsis
- 2D van der Waals materials, especially magnetic ones like NiGaS, are gaining attention for their unique properties and potential applications in heterostructures.
- Researchers successfully exfoliated a triangular lattice antiferromagnet NiGaS, establishing its number of layers through atomic force microscopy and examining its properties using Raman and optical spectroscopy.
- The study found that NiGaS acts as a Mott insulator with an electronic gap of around 1.5 eV, which varies with layer thickness, and discusses the potential for doping the monolayer version by proximity to metals.
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