Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by monolayer transition metal dichalcogenides (TMDs) carry valley-polarized information and thus could find promising applications in valleytronic devices. Current manipulation approaches for valley polarization of IXs are mainly limited in electrical field/doping, magnetic field or twist-angle engineering. Here, we demonstrate an electrochemical-doping method, which is efficient, in-situ and nonvolatile. We find the emission characteristics of IXs in WS/WSe HSs exhibit a large excitonic/valley-polarized hysteresis upon cyclic-voltage sweeping, which is ascribed to the chemical-doping of O/HO redox couple trapped between WSe and substrate. Taking advantage of the large hysteresis, a nonvolatile valley-addressable memory is successfully demonstrated. The valley-polarized information can be non-volatilely switched by electrical gating with retention time exceeding 60 min. These findings open up an avenue for nonvolatile valley-addressable memory and could stimulate more investigations on valleytronic devices.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8786835 | PMC |
| http://dx.doi.org/10.1038/s41377-022-00718-7 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Theoretical insights into spacer molecule design to tune stability, dielectric, and exciton properties in 2D perovskites.
Nanoscale
January 2025
Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau SAR 999078, China.
Two-dimensional organic-inorganic perovskites have garnered extensive interest owing to their unique structure and optoelectronic performance. However, their loose structures complicate the elucidation of mechanisms and tend to cause uncertainty and variations in experimental and calculated results. This can generally be rooted in dynamically swinging spacer molecules through two mechanisms: one is the intrinsic geometric steric effect, and the other is related to the electronic effect orbital overlapping and electronic screening.
View Article and Find Full Text PDFTuning electronic and optical properties of 2D polymeric C by stacking two layers.
Nanoscale
January 2025
Theory of Condensed Matter Group, Cavendish Laboratory, University of Cambridge, J.J.Thomson Avenue, Cambridge CB3 0HE, UK.
Benefiting from improved stability due to interlayer van der Waals interactions, few-layer fullerene networks are experimentally more accessible compared to monolayer polymeric C. However, there is a lack of systematic theoretical studies on the material properties of few-layer C networks. Here, we compare the structural, electronic and optical properties of bilayer and monolayer fullerene networks.
View Article and Find Full Text PDFIdentification of Two-Dimensional Interlayer Excitons and Their Valley Polarization in MoSe/WSe Heterostructure with -BN Spacer Layer.
ACS Nano
January 2025
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan.
Interlayer excitons (IXs) in the heterostructure of monolayer transition metal dichalcogenides (TMDs) are considered as a promising platform to study fundamental exciton physics and for potential applications of next generation optoelectronic devices. The IXs trapped in the moiré potential in a twisted monolayer TMD heterostructure such as MoSe/WSe form zero-dimensional (0D) moiré excitons. Introducing an atomically thin insulating layer between TMD monolayers in a twisted heterostructure would modulate the moiré potential landscape, thereby tuning 0D IXs into 2D IXs.
View Article and Find Full Text PDFElectrically Switching Ferroelectric Order in 3R-MoS Layers.
Nano Lett
January 2025
Department of Physics and Astronomy, University of California Riverside, Riverside, California 92521, United States.
Transition metal dichalcogenides (TMDs) with rhombohedral (3R) stacking order are excellent platforms to realize multiferroelectricity. In this work, we demonstrate the electrical switching of ferroelectric orders in bilayer, trilayer, and tetralayer 3R-MoS dual-gate devices by examining their reflection and photoluminescence (PL) responses under sweeping out-of-plane electric fields. We observe sharp shifts in excitonic spectra at different critical fields with pronounced hysteresis.
View Article and Find Full Text PDFPhotoinduced Long-Distance Charge Transfer in Silicanes: The Stacking Matters.
Nano Lett
January 2025
Department of Chemistry, York University, Toronto, Ontario M3J1P3, Canada.
The generation of interlayer charge transfer excitons upon photoexcitation is strongly desirable for two-dimensional (2D) materials stacked through van der Waals interactions. In this work, we investigate photoinduced charge transfer in silicanes (SiH) with three typical stackings. A concept of the regional natural hole orbital and its conjugated particle orbital is developed to characterize excited states in solids.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!