High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction.

Graphene/silicon Schottky junctions have been proven efficient for photodetection, but the existing high dark current seriously restricts applications such as weak signal detection. In this paper, a thin layer of gadolinium iron garnet (GdFeO, GdIG) film is introduced to engineer the interface of a graphene/silicon Schottky photodetector. The novel structure shows a significant decrease in dark current by 54 times at a -2 V bias. It also exhibits high performance in a self-powered mode in terms of an I/I ratio up to 8.2 × 10 and a specific detectivity of 1.35 × 10 Jones at 633 nm, showing appealing potential for weak-light detection. Practical suitability characterizations reveal a broadband absorption covering ultraviolet to near-infrared light and a large linear response with a wide range of light intensities. The device holds an operation speed of 0.15 ms, a stable response for 500 continuous working cycles, and long-term environmental stability after several months. Theoretical analysis shows that the interlayer increases the barrier height and passivates the contact surface so that the dark current is suppressed. This work demonstrates the good capacity of GdIG thin films as interlayer materials and provides a new solution for high-performance photodetectors.