Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 10 AW and a high photoconductivity gain of 5.0 × 10%, which shows great promise for further optoelectronic device applications.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778105 | PMC |
| http://dx.doi.org/10.3390/mi13010011 | DOI Listing |
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