The retina, the most crucial unit of the human visual perception system, combines sensing with wavelength selectivity and signal preprocessing. Incorporating energy conversion into these superior neurobiological features to generate core visual signals directly from incoming light under various conditions is essential for artificial optoelectronic synapses to emulate biological processing in the real retina. Herein, self-powered optoelectronic synapses that can selectively detect and preprocess the ultraviolet (UV) light are presented, which benefit from high-quality organic asymmetric heterojunctions with ultrathin molecular semiconducting crystalline films, intrinsic heterogeneous interfaces, and typical photovoltaic properties. These devices exhibit diverse synaptic behaviors, such as excitatory postsynaptic current, paired-pulse facilitation, and high-pass filtering characteristics, which successfully reproduce the unique connectivity among sensory neurons. These zero-power optical-sensing synaptic operations further facilitate a demonstration of image sharpening. Additionally, the charge transfer at the heterojunction interface can be modulated by tuning the gate voltage to achieve multispectral sensing ranging from the UV to near-infrared region. Therefore, this work sheds new light on more advanced retinomorphic visual systems in the post-Moore era.
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http://dx.doi.org/10.1002/advs.202103494 | DOI Listing |
ACS Appl Mater Interfaces
December 2024
School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.
Although MoSe-based photodetectors have achieved excellent performance, the ultrafast photoresponse has limited their application as an optoelectronic synapse. In this paper, the enhancement of the rhodamine 6G molecule on the memory time of MoSe is reported. It is found that the memory time of monolayer MoSe can be obviously enhanced after assembly with rhodamine 6G exhibiting synaptic characteristics in comparison to pristine MoSe.
View Article and Find Full Text PDFSensors (Basel)
December 2024
School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Neuromorphic computing, inspired by the brain, holds significant promise for advancing artificial intelligence. Artificial optoelectronic synapses, which can convert optical signals into electrical signals, play a crucial role in neuromorphic computing. In this study, we successfully fabricated a flexible artificial optoelectronic synapse device based on the ZnO/PDMS structure by utilizing the magnetron sputtering technique to deposit the ZnO film on a flexible substrate.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Department of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
This study presents the fabrication and characterization of a dual-functional Pt/GaO/Pt optoelectronic synaptic device, capable of operating as both a memristor and a memcapacitor. We detail the optimized radio frequency (RF) sputtering parameters, including a base pressure of 8.7 × 10 Torr, RF power of 100 W, working pressure of 3 mTorr, and the use of high-purity GaO and Pt targets.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing (AISSM), National Cheng Kung University, No. 1, University Road, Tainan City, 70101, Taiwan.
As the demand for the neuromorphic vision system in image recognition experiences rapid growth, it is imperative to develop advanced architectures capable of processing perceived data proximal to sensory terminals. This approach aims to reduce data movement between sensory and computing units, minimizing the need for data transfer and conversion at the sensor-processor interface. Here, an optical neuromorphic synaptic (ONS) device is demonstrated by homogeneously integrating optical-sensing and synaptic functionalities into a unified material platform, constructed exclusively by all-inorganic perovskite CsPbBr quantum dots (QDs).
View Article and Find Full Text PDFSmall Methods
December 2024
Chongqing Key Laboratory of Photo-Electric Functional Materials and Laser Technology, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331, P. R. China.
The continuous advancements in ultraviolet-C (UV-C) optoelectronics are poised to meet the growing demand for efficient and innovative optoelectronic devices, particularly in image sensing and neural communication. This study proposes a low-cost tube sealing and muffle calcination process for the catalyst-free synthesis of polymorphic β-GaO nanomaterials. These nanomaterials are synthesized via a vapor-solid (VS) growth mechanism, enabling the formation of high-quality nanowires (NWs), nanobelts (NBs), and nanosheets (NSs).
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