The related studies and applications of ZnS-based phosphorescent materials involve various aspects such as lighting, display, sensing, electronic signatures, and confidential information. Here, triboelectrification-induced electroluminescence (TIEL) of the ZnS:Cu due to the triboelectric leakage field is discovered via a gently horizontal sliding between a ZnS:Cu particle-doped polydimethylsiloxane (PDMS) film and a polytetrafluoroethylene (PTFE) or fluorinated ethylene propylene (FEP) film, whose intensity is positively correlated with the temperature, the doping ratio of ZnS:Cu, the pressure, and the frequency. It is also demonstrated that the TIEL mainly occurs inside the bulk film, where the ZnS:Cu phosphor particles can be polarized instantaneously by the leakage electric field of triboelectrification. The polarization will lead to a tilted energy band of the ZnS, resulting in an emitting of green light due to electrons detrapped into the conduction band and recombined with holes in the impurity state. This study not only reveals great fundamental physics for understanding of luminescence induced by a simple sliding between two triboelectric materials but also indicates another way for triboelectrification to be used in advanced optoelectronic devices.
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http://dx.doi.org/10.1021/acsami.1c23155 | DOI Listing |
ACS Appl Mater Interfaces
June 2024
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
Inorg Chem
November 2023
School of Mechanical Engineering, Institute for Advanced Materials, Chengdu University, Chengdu 610106, China.
The visualized dual-modal stress-temperature sensing refers to the ability of a sensor to provide real-time and visible information about both stress and temperature and has indeed attracted significant interest in various fields. However, the development of convenient methods for achieving this capability remains a challenge. In this work, a dual-modal stress-temperature sensor is successfully fabricated using a ZnS/Cu@CsPbBrI glass ceramics (GCs)/polydimethylsiloxane (PDMS) (ZCP) composite film.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2020
Micro- and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
In the areas of flexible displays and wearable devices, double-sided light-emitting devices have huge commercial applications. Here, we provide a novel form of flexible double-sided light-emitting devices by designing and manufacturing different transparent interdigital electrodes for lighting the structural areas of composite emitting layers. The transparent interdigital electrodes are fabricated by embedding multiwalled carbon nanotubes in interdigital mesh-structured microcavities using a doctor-blading process, and the emitting layers are fabricated by mixing copper-doped zinc sulfide (ZnS/Cu) phosphor particles with the transparent polydimethylsiloxane polymer.
View Article and Find Full Text PDFACS Omega
December 2019
CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, and Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
High luminescence intensity from materials that are excited by external stimuli is highly desired. In this work, a stretchable hybrid luminescent composite (HLC) that has multiple luminescence modes is reported. The luminescence can be excited either by externally applied mechanical strain or by a moving object that slides against the HLC.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2019
School of Advanced Materials Engineering , Chonbuk National University, 567 Baekje-daero , Deokjin-gu, Jeonju 54896 , Republic of Korea.
Most photodetectors developed to date essentially measure photocurrents induced by the generation and separation of electron-hole pairs in semiconductors during irradiation. Although the above light detection method is well established, highly sensitive, and applicable to a broad range of semiconductor materials, it requires the presence of a stable and direct contact between the semiconductor and the electrode for accurate photocurrent measurements. In turn, this prerequisite necessitates the use of various costly processes for device fabrication (e.
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