In order to meet the requirements of hypervelocity launch in the context of defending against space debris and deflecting asteroids, an electrical gun with 200 kJ of storage energy was recently built. The electrical gun is composed of 16 gas spark switch-capacitor modules, and pulse current is transmitted by parallel aluminum plates that are insulated by polyester foils. The capacitance, inductance, and resistance of the RLC circuit of the 200 kJ electrical gun are 80 µF, 10.3 nH, and 2.6 mΩ, respectively. It can generate pulse current with a rise time of 1.33 µs and an amplitude of 5.2 MA when short-circuited at a charging voltage of 70 kV. Hypervelocity flyer launch experiments were carried out on the 200 kJ electrical gun, in which a ϕ20 × 0.5 mm Mylar flyer (0.22 g) was accelerated to 10 km/s.
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http://dx.doi.org/10.1063/5.0064003 | DOI Listing |
Regen Ther
March 2025
Department of Physiology, Keio University School of Medicine, 35 Shinanomachi, Shinjuku, Tokyo 160-8582, Japan.
Introduction: Tau protein plays a pivotal role in the pathogenesis of Alzheimer's disease (AD) and in regulating neuronal excitability. Among tau-coding microtubule associated protein tau () gene mutations, the A152T mutation is reported to increase the risk of AD and neuronal excitability in mouse models.
Methods: To investigate the effects of gene expression and its mutations on neuronal activity in human neurons, we employed genome editing technology to introduce the A152T or P301S mutations into induced pluripotent stem cells (iPSCs).
ACS Appl Mater Interfaces
January 2025
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, South Korea.
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal-ferroelectric-metal (MFM) capacitor structure.
View Article and Find Full Text PDFSci Rep
December 2024
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
A ridge-loaded staggered double-vane slow-wave structure is proposed for terahertz radiation sources employing a sheet electron beam. This slow-wave structure has the advantages of enhanced electric field and energy density distribution and improved interaction impedance in the beam-wave interaction region. High-frequency characteristics are investigated for the proposed slow wave structure and compared with those of the staggered double-vane slow wave structure.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Materials Science and Engineering, Chosun University, Gwangju 61452, Korea.
With the applications of in situ X-ray diffraction (XRD), electrical - measurement, and ambient pressure hard X-ray photoelectron spectroscopy (AP-HAXPES), the characteristics of the topotactic phase transition of LaCoO (LCO) thin films are examined. XRD measurements show clear evidence of structural phase transition (SPT) of the LCO thin films from the perovskite (PV) LaCoO to the brownmillerite (BM) LaCoO phases through the intermediate LaCoO phase at a temperature of 350 °C under high-vacuum conditions, ∼10 mbar. The reverse SPT from BM to PV phases is also found under ambient pressure (>100 mbar) of air near 100 °C.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2024
School of Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea.
Strain engineering provides an attractive approach to enhance device performance by modulating the intrinsic electrical properties of materials. This is especially applicable to 2D materials, which exhibit high sensitivity to mechanical stress. However, conventional methods, such as using polymer substrates, to apply strain have limitations in that the strain is temporary and global.
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