The high thermal stability of white emitting phosphor Mg Y Al Si O :Dy ,Eu ,La /Lu for white light emitting diodes.

A series of Mg Y Al Si O :Dy ,Eu was prepared using a solid-state method, and the phosphor emitted white light by tuning the ratio of Dy /Eu . The effects of La /Lu on the structure and luminescence properties of Mg Y Al Si O :Dy ,Eu were explored. Under the influence of bond length and twist, the luminescence intensity of the materials increased first and then decreased under excitation with ultraviolet light. The lattice distortion of the trivalent cation La -substituted Mg Y Al Si O :Dy and Eu phosphors was reduced, the symmetry of polyhedron occupied by the luminescence centre improved, and the thermal stability of the luminescence centre improved to a certain extent. White light emitting diodes (LEDs) were fabricated by combining a 370 nm LED chip and the Mg Y Al Si O :Dy ,Eu ,La (Mg Y Al Si O :Dy ,Eu ,Lu ) phosphor. The results showed that Mg Y Al Si O :Dy ,Eu ,La /Lu may have potential application in the area of white LEDs.