Optoelectronic Properties of Atomically Thin MoWS Nanoflakes Probed by Spatially-Resolved Monochromated EELS.

Nanomaterials (Basel)

Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-U. de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza, Spain.

Published: November 2021

Band gap engineering of atomically thin two-dimensional (2D) materials has attracted a huge amount of interest as a key aspect to the application of these materials in nanooptoelectronics and nanophotonics. Low-loss electron energy loss spectroscopy has been employed to perform a direct measurement of the band gap in atomically thin MoxW(1-x)S2 nanoflakes. The results show a bowing effect with the alloying degree, which fits previous studies focused on excitonic transitions. Additional properties regarding the Van Hove singularities in the density of states of these materials, as well as high energy excitonic transition, have been analysed as well.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8708971PMC
http://dx.doi.org/10.3390/nano11123218DOI Listing

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