New Low-Frame-Rate Compensating Pixel Circuit Based on Low-Temperature Poly-Si and Oxide TFTs for High-Pixel-Density Portable AMOLED Displays.

Micromachines (Basel)

Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da'an Dist., Taipei City 106, Taiwan.

Published: December 2021

A new low-frame-rate active-matrix organic light-emitting diode (AMOLED) pixel circuit with low-temperature poly-Si and oxide (LTPO) thin-film transistors (TFTs) for portable displays with high pixel density is reported. The proposed pixel circuit has the excellent ability to compensate for the threshold voltage variation of the driving TFT (ΔV). By the results of simulation based on a fabricated LTPS TFT and a-IZTO TFT, we found that the error rates of the OLED current were all lower than 2.71% over the range of input data voltages when ΔV = ±0.33 V, and a low frame rate of 1 Hz could be achieved with no flicker phenomenon. Moreover, with only one capacitor and two signal lines in the pixel circuit, a high pixel density and narrow bezel are expected to be realized. We revealed that the proposed 7T1C pixel circuit with low driving voltage and low frame rate is suitable for portable displays.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705292PMC
http://dx.doi.org/10.3390/mi12121514DOI Listing

Publication Analysis

Top Keywords

pixel circuit
20
low-temperature poly-si
8
poly-si oxide
8
portable displays
8
high pixel
8
pixel density
8
low frame
8
frame rate
8
pixel
7
circuit
5

Similar Publications

The nonlinearity problem of digital pixels restricts the reduction in power consumption at the pixel-level circuit. The main cause of nonlinearity is discussed in this article and low power consumption is attained by reducing the static current in capacitive transimpedance amplifiers (CTIAs) and comparators. Linearity was successfully improved through the use of an off-chip calibration method.

View Article and Find Full Text PDF

Perovskite retinomorphic image sensor for embodied intelligent vision.

Sci Adv

January 2025

Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.

Retinomorphic systems that can see, recognize, and respond to real-time environmental information will extend the complexity and range of tasks that an exoskeleton robot can perform to better assist physically disabled people. However, the lack of ultrasensitive, reconfigurable, and large-scale integratable retinomorphic devices and advanced edge-processing algorithms makes it difficult to realize retinomorphic hardware. Here, we report the retinomorphic hardware prototype with a 4096-pixel perovskite image sensor array as core module to endow embodied intelligent vision functionalities.

View Article and Find Full Text PDF

Recent advances in mass transfer technology are expected to bring next-generation micro light-emitting diodes (µLED) displays into reality, although reliable integration of the active-matrix backplane with the transferred µLEDs remains as a challenge. Here, the µLED display technology is innovated by demonstrating pixel circuit-integrated micro-LEDs (PIMLEDs) and integrating them onto a transparent glass substrate. The PIMLED comprises of low-temperature poly-silicon transistors and GaN µLED.

View Article and Find Full Text PDF
Article Synopsis
  • Thin film photodiodes (TFPD), especially those made from halide perovskites, offer excellent optoelectronic properties, such as high absorption and fast charge transport, making them superior to other thin-film options.
  • The study showcases how integrating perovskite photodiodes with silicon read-out integrated circuits (ROIC) enables high-resolution 2D imaging and facilitates 3D imaging through advanced techniques like time-of-flight sensing.
  • This development presents a major advancement in TFPD technology, with potential applications in areas such as automotive systems, augmented reality (AR), and virtual reality (VR).
View Article and Find Full Text PDF

A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits.

Sensors (Basel)

November 2024

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institution of Nuclear Technology, Xi'an 710024, China.

Complementary Metal-Oxide-Semiconductor (CMOS) image sensors (CISs), known for their high integration, low cost, and superior performance, have found widespread applications in satellite and space exploration. However, the readout circuits of pixel arrays are vulnerable to functional failures in complex or intense radiation environments, particularly due to transient γ radiation. Using Technology Computer-Aided Design (TCAD) device simulations and Simulation Program with Integrated Circuit Emphasis (SPICE) circuit simulations, combined with a double-exponential current source fault injection method, this study investigates the transient dose rate effect (TDRE) on a typical readout circuit of CISs.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!