In this study, the effects of magnesium (Mg) doping and Ammonia (NH) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH plasma were examined with multiple material analyses including X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and transmission electron microscope, and pH sensing behaviors of the membrane in electrolyte-insulator-semiconductors. Results indicate that Mg doping and NH plasma treatment could superpositionally enhance crystallization in fine nanostructures, and strengthen chemical bindings. Results indicate these material improvements increased pH sensing capability significantly. Plasma-treated Mg-doped InGaZnO pH sensing membranes show promise for future pH sensing biosensors.
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http://dx.doi.org/10.3390/membranes11120994 | DOI Listing |
Bioelectrochemistry
December 2024
Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China. Electronic address:
Accurate, convenient, label-free, and cost-effective biomolecules detection platforms are currently in high demand. In this study, we showcased the utilization of electrolyte-gated InGaZnO field-effect transistors (IGZO FETs) featuring a large on-off current ratio of over 10 and a low subthreshold slope of 78.5 mV/dec.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2024
Department of Physics, National Chung Hsing University, Taichung 402, Taiwan.
This study explores the utilization of the organic conductive molecule Polypyrrole (PPy) for the modification of Indium Gallium Zinc Oxide (IGZO) nanoparticles, aiming to develop highly sensitive ozone sensors. Pyrrole (Py) molecules undergo polymerization, resulting in the formation of extended chains of PPy that graft onto the surface of IGZO nanoparticles. This interaction effectively diminishes oxygen vacancies on the IGZO surface, thereby promoting the crystallization of the IGZO (1114) facets.
View Article and Find Full Text PDFMicromachines (Basel)
May 2024
Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai University, Shanghai 201800, China.
In this paper, the effect of a buffer layer created using different hydrogen-containing ratios of reactive gas on the electrical properties of a top-gate In-Ga-Zn-O thin-film transistor was thoroughly investigated. The interface roughness between the buffer layer and active layer was characterized using atomic force microscopy and X-ray reflection. The results obtained using Fourier transform infrared spectroscopy show that the hydrogen content of the buffer layer increases with the increase in the hydrogen content of the reaction gas.
View Article and Find Full Text PDFNat Commun
September 2023
Key Laboratory of MEMS of the Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China.
A full integration of miniaturized transparent energy device (lithium-ion battery), electronic device (thin-film transistor) and sensing device (photodetector) to form a monolithic integrated microsystem greatly enhances the functions of transparent electronics. Here, InGaZnO is explored to prepare the above devices and microsystem due to its multifunctional properties. A transparent lithium-ion battery with InGaZnO as anode (capacity~9.
View Article and Find Full Text PDFAdv Mater
May 2024
School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China.
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