Doping Pb in LaAlO to generate dual emission centers and an optical storage container for visible and near infrared persistent luminescence.

Defects play an important role in luminescence, not only as non-radiative transition centers to decrease the luminescence intensity, but also as useful centers for improving luminescence. Phosphors with unique characteristics can be designed by using effective defects combined with the luminescence center. Here, a novel phosphor of LaAlO:Pb was synthesized by a solid state reaction. Two kinds of defects, which are and Pb', were constructed by incorporation of Pb into LaAlO. Under UV excitation at 285 nm, the sample outputted a broad cyan emission at 460 nm that is related to the P-S transition of Pb, along with a weak near infrared (NIR) emission at 735 nm. However, only NIR emission at 735 nm can be found upon 211 nm excitation. The defect levels of and Pb' in the band gap are evidenced to be the contributor for the NIR output. Heating the sample resulted in a weakened cyan emission and an enhanced NIR output. Because the defects of and Pb' also act as the electron and hole traps, the sample outputted cyan and NIR afterglows after removing the irradiation source. Since the optical signal of LaAlO:Pb is sensitive to the excitation wavelength, temperature, and duration time, the multimodal luminescent phosphor may be used as a potential anti-counterfeiting material.