Optimizing Room-Temperature Thermoelectric Performance of n-Type BiTeSe.

ACS Omega

School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.

Published: December 2021

BiTe-based compounds are exclusive commercial thermoelectric materials around room temperature. For n-type compounds, optimal thermoelectric properties are normally obtained at temperatures higher than room temperature to suppress the bipolar effect through increased carrier concentration. We find that doping with trace amounts of Cd and the addition of excess Bi are effective ways to optimize carrier concentration and achieve enhanced room-temperature thermoelectric performance for the BiTeSe alloy in this work. For the Cd-doped samples, the replacement of Cd with Bi leads to not only a significant decrease in electron concentration but also apparently reduces the total thermal conductivity. The addition of excess Bi in the samples creates a Bi-rich synthetic atmosphere during the synthesis process, leading to increased Bi antisite defects, decreased electron concentration, and reduced total thermal conductivity. Doping a small amount of Cd or adding excess Bi causes optimal thermoelectric performance of the n-type BiTeSe sample shifts obviously toward low temperatures, and the samples with 0.4 atom % Cd and 0.8 atom % excess Bi achieve maximum of ∼0.97 at 448 K and ∼0.88 at 348 K, respectively.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8675032PMC
http://dx.doi.org/10.1021/acsomega.1c05160DOI Listing

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