Near-infrared photodetectors (NIR-PDs) are widely used in communications, biomedical imaging, and national defense. Here we report a new strategy to prepare a short wavelength light filter based NIR-PDs by introducing an interface layer between the perovskite layer and the polymer layer to achieve the selective passage of carriers. Through the synergistic effect of the perovskite and the interface layer, the short wavelength light component in the signal spectrum is effectively filtered out. The organic polymer layer with a bulk heterojunction structure is applied to realize the absorption and conversion of near-infrared light. The prepared device achieves a maximum external quantum efficiency of 83.7% without bias, a high specific detectivity of 1.52 × 10 Jones, an NIR responsivity of 0.577A/W, and a short response time of 1.73/0.97 μs within the detection range from 770 to 900 nm. All these properties show great advantages compared with other perovskite/polymer hybrid NIR photodetectors that have been reported. This innovative strategy provides a new way to prepare high-performance near-infrared photodetectors.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acsami.1c20742 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Multispectral Integrated Black Arsenene Phototransistors for High-Resolution Imaging and Enhanced Secure Communication.
ACS Nano
December 2024
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China.
The demand for broadband, room-temperature infrared, and terahertz (THz) detectors is rapidly increasing owing to crucial applications in telecommunications, security screening, nondestructive testing, and medical diagnostics. Current photodetectors face significant challenges, including high intrinsic dark currents and the necessity for cryogenic cooling, which limit their effectiveness in detecting low-energy photons. Here, we introduce a high-performance ultrabroadband photodetector operating at room temperature based on two-dimensional black arsenene (b-As) nanosheets.
View Article and Find Full Text PDFBias Tunable SnS/ReSe Tunneling Photodetector with High Responsivity and Fast Response Speed.
Small
December 2024
School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China.
2D photodetectors operating in photovoltaic mode exhibit a trade-off between response speed and photoresponsivity. This work presents a phototransistor based on SnS/ReSe heterojunction. Under negative bias, the energy band spike at the heterojunction interface impedes the carrier drifting so that the dark current is as low as 10 A.
View Article and Find Full Text PDFEnhanced Performance of Sn-Based Perovskite Photodetectors Through Double-Sided Passivation for Near-Infrared Applications.
Small
December 2024
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
The development of high-performance Sn-based perovskite photodetectors is presented with double-sided passivation using large alkylammonium interlayers of PEAI and BDAI₂. This dual passivation strategy, applied to the top and bottom of FASnI₃ films, effectively improves film quality by reducing defect density, enhancing carrier mobility, and minimizing non-radiative energy losses at the interfaces. At 720 nm, the photodetectors demonstrate a responsivity of 0.
View Article and Find Full Text PDFBifunctional Design of Ferroelectric-Order and Band-Engineering in Cu:KTN Crystal for Extended Self-Powered Photoelectric Response.
Adv Sci (Weinh)
December 2024
State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
Photoelectric conversion in ferroelectric crystals can support many important applications in modern on-chip technology, but suffering from two problems, low responsive current and narrow responsive range. Especially, wide-gap ferroelectric oxides are only active at short-wavelength ultraviolet region with weak photocurrent at nanoampere levels. Here, a bifunctional design strategy of ferroelectric-order and electronic-band to improve the photocurrent and extend the responsive range simultaneously, is proposed.
View Article and Find Full Text PDFFirst-principles study of electron dynamics of MoS2 under femtosecond laser irradiation from deep ultraviolet to near-infrared wavelengths.
J Chem Phys
December 2024
State Key Laboratory of Precision Measuring Technology and Instruments, Laboratory of Micro/Nano Manufacturing Technology (MNMT), Tianjin University, Tianjin 300072, China.
Article Synopsis
- The study used time-dependent density functional theory to analyze how MoS2 (a semiconductor material) reacts to laser pulses, focusing on factors like laser wavelength, intensity, and polarization.
- Findings revealed that the way MoS2 absorbs energy changes at different laser intensities, particularly distinguishing between infrared (IR) and ultraviolet (UV) lasers.
- The research has important implications for improving MoS2 photodetectors, especially in terms of their performance and durability when exposed to powerful short-wavelength lasers.
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!