Two-dimensional semiconductors (2DSCs) are attractive for a variety of optoelectronic and catalytic applications due to their ability to be fabricated as wide-area, monolayer-thick films and their unique optical and electronic properties which emerge at this scale. One important class of 2DSCs are the transition metal dichalcogenides (TMDs), which are of particular interest as absorbing layers in ultrathin optoelectronic devices. While TMDs are known to exhibit excellent photovoltaic properties at the bulk level, it is not yet clear how carriers are transported in these materials at thicknesses approaching the monolayer limit, where distinct changes in band structure and the nature of photogenerated carriers occur. Here, it is demonstrated that electrochemical microscopy techniques can be employed as powerful tools for visualizing these processes in 2DSCs, even within individual monolayers. Carrier generation-tip collection scanning electrochemical cell microscopy (CG-TC SECCM), which utilizes spatially-offset optical and pipet-based electrochemical probes to locally generate and detect photogenerated carriers, was applied to visualize carrier generation and transport within well-defined n-WSe samples prepared mechanical exfoliation. Data from these experiments directly reveal how carrier transport varies within complex 2DSC structures as layer thicknesses approach the monolayer limit. These results not only provide valuable new insights into carrier transport within monolayer TMD materials, but also demonstrate electrochemical imaging to be a powerful, yet underutilized approach for visualizing solid-state processes in semiconducting materials.
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http://dx.doi.org/10.1039/d1fd00052g | DOI Listing |
Materials (Basel)
December 2024
Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
With the development of diamond technology, its application in the field of electronics has become a new research hotspot. Hydrogen-terminated diamond has the electrical properties of P-type conduction due to the formation of two-dimensional hole gas (2DHG) on its surface. However, due to various scattering mechanisms on the surface, its carrier mobility is limited to 50-200 cm/(Vs).
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December 2024
Department of Physics, Gachon University, Seongnam 13120, Republic of Korea.
MXenes, two-dimensional (2D) transition metal carbides and nitrides, have shown promise in a variety of applications. The use of MXenes in active electronic devices is restricted to electrode materials due to their metallic nature. However, MXenes can be modified to be semiconducting and can be used for next-generation channel materials.
View Article and Find Full Text PDFMolecules
December 2024
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
Surface-enhanced Raman scattering (SERS) stands out as a highly effective molecular identification technique, renowned for its exceptional sensitivity, specificity, and non-destructive nature. It has become a main technology in various sectors, including biological detection and imaging, environmental monitoring, and food safety. With the development of material science and the expansion of application fields, SERS substrate materials have also undergone significant changes: from precious metals to semiconductors, from single crystals to composite particles, from rigid to flexible substrates, and from two-dimensional to three-dimensional structures.
View Article and Find Full Text PDFNat Commun
January 2025
School of Physics, Key Laboratory of Quantum Materials and Devices of Ministry of Education, and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, China.
The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications, but has thus far remained an outstanding challenge using conventional materials. Two-dimensional (2D) heterostructures provide an alternative path toward this goal, yet despite continued efforts, their performance has not matched that of low-temperature HgCdTe photodetectors. Here, we push the detectivity and response speed of a 2D heterostructure-based mid-infrared photodetector to be comparable to, and even superior to, commercial cooled HgCdTe photodetectors by utilizing a vertical transport channel (graphene/black phosphorus/molybdenum disulfide/graphene).
View Article and Find Full Text PDFNat Mater
January 2025
Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, P. R. China.
Batch production of single-crystal two-dimensional (2D) transition metal dichalcogenides is one prerequisite for the fabrication of next-generation integrated circuits. Contemporary strategies for the wafer-scale high-quality crystallinity of 2D materials centre on merging unidirectionally aligned, differently sized domains. However, an imperfectly merged area with a translational lattice brings about a high defect density and low device uniformity, which restricts the application of the 2D materials.
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