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Dark exciton anti-funneling in atomically thin semiconductors. | LitMetric

AI Article Synopsis

  • The study focuses on the transport of excitons, which are neutral electron-hole pairs that are significant in atomically thin semiconductors, contrasting with conventional materials where electronic transport is controlled by electric fields.
  • By using strain engineering, researchers have been able to manipulate exciton movement, leading to unexpected behavior where excitons move away from areas of high strain instead of toward them, deviating from traditional expectations.
  • This research advances the understanding of exciton transport, revealing the influence of dark excitons, and holds potential for new technological applications in nanoelectronics and atomically thin materials.

Article Abstract

Transport of charge carriers is at the heart of current nanoelectronics. In conventional materials, electronic transport can be controlled by applying electric fields. Atomically thin semiconductors, however, are governed by excitons, which are neutral electron-hole pairs and as such cannot be controlled by electrical fields. Recently, strain engineering has been introduced to manipulate exciton propagation. Strain-induced energy gradients give rise to exciton funneling up to a micrometer range. Here, we combine spatiotemporal photoluminescence measurements with microscopic theory to track the way of excitons in time, space and energy. We find that excitons surprisingly move away from high-strain regions. This anti-funneling behavior can be ascribed to dark excitons which possess an opposite strain-induced energy variation compared to bright excitons. Our findings open new possibilities to control transport in exciton-dominated materials. Overall, our work represents a major advance in understanding exciton transport that is crucial for technological applications of atomically thin materials.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8664915PMC
http://dx.doi.org/10.1038/s41467-021-27425-yDOI Listing

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