Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating.

Materials (Basel)

State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China.

Published: December 2021

AI Article Synopsis

  • A numerical simulation was conducted to study heat transfer processes in an AlN crystal growth resistance furnace based on its actual hot zone structure.
  • The simulation examined how different heater configurations impact the growth of AlN crystals, revealing that a top heater effectively reduces the axial temperature gradient.
  • The study found that adding a bottom heater increases the axial temperature gradient, with the side 1 heater and bottom heater combination offering the largest adjustable range for control.

Article Abstract

Based on the actual hot zone structure of an AlN crystal growth resistance furnace, the global numerical simulation on the heat transfer process in the AlN crystal growth was performed. The influence of different heater structures on the growth of AlN crystals was investigated. It was found that the top heater can effectively reduce the axial temperature gradient, and the side heater 2 has a similar effect on the axial gradient, but the effect feedback is slightly weaker. The axial temperature gradient tends to increase when the bottom heater is added to the furnace, and the adjustable range of the axial temperature gradient of the side 1 heater + bottom heater mode is the largest. Our work will provide important reference values for AlN crystal growth by the resistance method.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8658778PMC
http://dx.doi.org/10.3390/ma14237441DOI Listing

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