Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB nanowires.

Nanoscale

Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing, 100871, P. R. China.

Published: December 2021

SmB, which opens up an insulating bulk gap due to hybridization between itinerant d-electrons and localized f-electrons below a critical temperature, turns out to be a topological Kondo insulator possessing exotic conducting states on its surface. However, measurement of the surface-states in SmB draws controversial conclusions, depending on the growth methods and experimental techniques used. Herein, we report anisotropic magnetoresistance (AMR) observed in the Kondo energy gap of a single SmB nanowire that is immune to magnetic dopant pollution and features a square cross-section to show high-symmetry crystal facets. The AMR clearly shows a cosine function of included angle between magnetic field and measuring current with a period of π. The positive AMR is interpreted by anisotropically lifting the topological protection of spin-momentum inter-locking surface-states by rotating the in-plane magnetic field, which, therefore, provides the transport evidence that supports the topologically nontrivial nature of the SmB surface-states.

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http://dx.doi.org/10.1039/d1nr07047aDOI Listing

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