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http://dx.doi.org/10.1021/acs.nanolett.1c04625 | DOI Listing |
Microsyst Nanoeng
June 2024
Laboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, Delft, The Netherlands.
[This corrects the article DOI: 10.1038/s41378-024-00656-x.].
View Article and Find Full Text PDFAdv Mater
September 2023
AMOLF, Science Park 104, Amsterdam, 1098XG, The Netherlands.
The discovery of self-organization principles that enable scalable routes toward complex functional materials has proven to be a persistent challenge. Here, reaction-diffusion driven, immersion-controlled patterning (R-DIP) is introduced, a self-organization strategy using immersion-controlled reaction-diffusion for targeted line patterning in thin films. By modulating immersion speeds, the movement of a reaction-diffusion front over gel films is controlled, which induces precipitation of highly uniform lines at the reaction front.
View Article and Find Full Text PDFACS Appl Mater Interfaces
February 2022
Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany.
Graphene, a zero-gap semiconductor, absorbs 2.3% of incident photons in a wide wavelength range as a free-standing monolayer, whereas 50% is expected for ∼90 layers. Adjusting the layer number allows the tailoring of the photoresponse; however, controlling the thickness of multilayer graphene remains challenging on the wafer scale.
View Article and Find Full Text PDFNano Lett
December 2021
Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea.
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