AI Article Synopsis
- Transition metal dichalcogenides (TMDCs) are important materials for applications in optoelectronics and photovoltaics, with their properties varying based on the number of atomic layers.
- The study examines how different methods, including photoluminescence and various atomic force microscopy (AFM) techniques, can lead to significant differences in measuring the heights of exfoliated MoS2 flakes on silicon dioxide (SiO2).
- It emphasizes that electrostatic forces can complicate AFM height measurements of MoS2, which can result in misleading data about the material’s structure.
Article Abstract
Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are highly dependent on the number of stacked atomic layers, which is usually counted post-fabrication, using a combination of optical methods and atomic force microscopy height measurements. Here, we use photoluminescence spectroscopy, Raman spectroscopy, and three different AFM methods to demonstrate significant discrepancies in height measurements of exfoliated MoSeflakes on SiOdepending on the method used. We also highlight the often overlooked effect that electrostatic forces can be misleading when measuring the height of a MoSeflake using AFM.
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| http://dx.doi.org/10.1088/1361-6528/ac40bd | DOI Listing |
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