Metal-organic framework (MOF) thin films currently lack the mechanical stability needed for electronic device applications. Polymer-based metal-organic frameworks (polyMOFs) have been suggested to provide mechanical advantages over MOFs, however, the mechanical properties of polyMOFs have not yet been characterized. In this work, we developed a method to synthesize continuous sub-5 μm polyUiO-66(Zr) films on Au substrates, which allowed us to undertake initial mechanical property investigations. Comparisons between polyUiO-66 and UiO-66 thin films determined polyUiO-66 thin films exhibit a lower modulus but similar hardness to UiO-66 thin films. The initial mechanical characterization indicates that further development is needed to leverage the mechanical property advantages of polyMOFs over MOFs. Additionally, the demonstration in this work of a continuous surface-supported polyUiO-66 thin film enables utilization of this emerging class of polyMOF materials in sensors and devices applications.
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http://dx.doi.org/10.1002/cphc.202100673 | DOI Listing |
ACS Nano
January 2025
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness, which makes complex micromachining difficult. Photoelectrochemical (PEC) etching is a simple, rapid means of wet processing SiC, including the use of dopant-selective etch stops that take advantage of the mature SiC homoepitaxy.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington 6012, New Zealand.
The organic semiconductor Y6 has been extensively used as an acceptor in organic photovoltaic devices, yielding high efficiencies. Its unique properties include a high refractive index, intrinsic exciton dissociation, and barrierless charge generation in bulk heterojunctions. However, the direct impact of the crystal packing morphology on the photophysics of Y6 has remained elusive, hindering further development of heterojunction and homojunction devices.
View Article and Find Full Text PDFACS Electrochem
January 2025
Department of Chemistry, Texas A&M University, College Station, Texas 77843, United States.
We demonstrate the application and benefit of optically transparent carbon electrodes (OTCEs) for single entity nanoelectrochemistry. OTCEs are prepared by pyrolyzing thin photoresist films on fused quartz coverslips to create conductive, transparent, thin films. Optical, electrical, topographical, and electrochemical properties of OTCEs are characterized to evaluate their suitability for single entity electrochemistry.
View Article and Find Full Text PDFChem Sci
January 2025
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University Shenzhen Guangdong 518060 China
SbTe-based flexible thin films can be utilized in the fabrication of self-powered wearable devices due to their huge potential in thermoelectric performance. Although doping can significantly enhance the power factor value, the process of identifying suitable dopants is typically accompanied by numerous repeating experiments. Herein, we introduce Zn doping into thermally diffused p-type SbTe flexible thin films with a candidate dopant validated using the first-principles calculations.
View Article and Find Full Text PDFHeliyon
January 2025
Bangladesh Council of Scientific and Industrial Research (BCSIR), Bangladesh.
A soda lime glass substrate is used for fabricating CuZnSnS (CZTS) thin films using copper (II) sulfide (CuS), zinc sulfide (ZnS), and tin sulfide (SnS) targets using an advanced co-sputtering deposition process. Following that, the films are annealed at 470 °C without sulfur (S). An algorithm based on the deposition rate of the previously specified targets set the co-sputtering condition, which maintains a deposition pressure of 5, 10, 15, and 20 mTorr.
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