Colossal Magnetoresistance in Ti Lightly Doped CrSe Single Crystals with a Layered Structure.

ACS Appl Mater Interfaces

School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China.

Published: December 2021

AI Article Synopsis

  • Stoichiometric CrSe single crystals are unique antiferromagnets characterized by noncollinear spin configurations and moderate magnetoresistance, with poor metallic conductivity below a certain temperature.
  • Doping these crystals with 1.5 atomic percent titanium leads to a huge increase in magnetoresistance (over 16,000%), which is significantly higher than that of undoped CrSe, and is linked to the altered spin configuration.
  • This titanium doping transforms CrSe from metallic to semiconducting behavior, changes its magnetic anisotropy, and suggests potential applications in spintronic devices due to the impressive magnetoresistance properties.

Article Abstract

Stoichiometric CrSe single crystals are particular layer-structured antiferromagnets, which possess a noncollinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ∼14.3%), and poor metallic conductivity below the antiferromagnetic phase transition. Here, we report an interesting >16 000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) lightly doped CrSe single crystals. Such a CMR is approximately 1143 times larger than that of the stoichiometric CrSe crystals and is rarely observed in layered antiferromagnets and is attributed to the frustrated spin configuration. Moreover, the Ti doping not only dramatically changes the electronic conductivity of the CrSe crystal from a bad metal to a semiconductor with a gap of ∼15 meV but also induces a change in the magnetic anisotropy of the CrSe crystal from strong out-of-plane to weak in-plane. Further, magnetotransport measurements reveal that the low-field MR scales with the square of the reduced magnetization, which is a signature of CMR materials. The layered Ti:CrSe with the CMR effect could be used as two-dimensional (2D) heterostructure building blocks to provide colossal negative MR in spintronic devices.

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Source
http://dx.doi.org/10.1021/acsami.1c18848DOI Listing

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