Semiconductor yarns with unique functional characteristics have great potential applications in next-generation electronic devices. However, scalable inorganic semiconductor yarns with excellent mechanical and electrical properties, and environmental stability have not been discovered. In this study, we explored a unique fluid-spinning strategy to obtain a series of scalable inorganic semiconductor yarns including neat and hybrid semiconductor yarns. Different from the conventional yarn spinning strategy through a mechanical motor, we utilized the fluid force from the triple-phase interface to assemble and twist inorganic nanofiber building blocks simultaneously, and eventually obtained highly oriented inorganic nanowire-based semiconductor yarns. The obtained semiconductor yarns showed an excellent flexibility (curvature exceeding 2 cm) and mechanical strength (tensile strength of 443 MPa) because of their highly oriented hierarchical nanostructures, which make them coiling able with highly twisted insertion. Additionally, coiled yarns were obtained by combining the host core material and functional guest sheath in a fluid-spinning process, which are flexible in deep cryogenic temperature owing to the pure inorganic building blocks (26.28% tensile strain in liquid nitrogen). In particular, inorganic yarn-based electrochromic actuators can obtain as high as 15.3% tensile stroke and 0.82 J g work capacity by electrochemical charge injection-associated multicolor switching.
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http://dx.doi.org/10.1039/d1mh00135c | DOI Listing |
Adv Sci (Weinh)
October 2024
Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg, 412 96, Sweden.
Thermoelectric textile devices represent an intriguing avenue for powering wearable electronics. The lack of air-stable n-type polymers has, until now, prevented the development of n-type multifilament yarns, which are needed for textile manufacturing. Here, the thermomechanical properties of the recently reported n-type polymer poly(benzodifurandione) (PBFDO) are explored and its suitability as a yarn coating material is assessed.
View Article and Find Full Text PDFPolymers (Basel)
May 2023
Faculty of Electrical Engineering, University of West Bohemia, Univerzitní 8, 301 00 Pilsen, Czech Republic.
Nowadays, a range of sensors and actuators can be realized directly in the structure of textile substrates using metal-plated yarns, metal-filament yarns, or functionalized yarns with nanomaterials, such as nanowires, nanoparticles, or carbon materials. However, the evaluation or control circuits still depend upon the use of semiconductor components or integrated circuits, which cannot be currently implemented directly into the textiles or substituted by functionalized yarns. This study is focused on a novel thermo-compression interconnection technique intended for the realization of the electrical interconnection of SMD components or modules with textile substrates and their encapsulation in one single production step using commonly widespread cost-effective devices, such as 3D printers and heat-press machines, intended for textile applications.
View Article and Find Full Text PDFNat Commun
June 2022
Department of Flexible and Printable Electronics, LANL-JBNU Engineering Institute-Korea, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju, 54896, Republic of Korea.
Adv Mater
March 2022
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Though highly promising as powerful gas sensors, oxide semiconductor chemiresistors have low surface reactivity, which limits their selectivity, sensitivity, and reaction kinetics, particularly at room temperature (RT) operation. It is proposed that a hybrid design involving the nanostructuring of oxides and passivation with selective gas filtration layers can potentially overcome the issues with surface activity. Herein, unique bi-stacked heterogeneous layers are introduced; that is, nanostructured oxides covered by conformal nanoporous gas filters, on ultrahigh-density nanofiber (NF) yarns via sputter deposition with indium tin oxide (ITO) and subsequent self-assembly of zeolitic imidazolate framework (ZIF-8) nanocrystals.
View Article and Find Full Text PDFMater Horiz
June 2021
State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science & Engineering, Donghua University, 2999 Renmin Road, Shanghai 201620, China.
Semiconductor yarns with unique functional characteristics have great potential applications in next-generation electronic devices. However, scalable inorganic semiconductor yarns with excellent mechanical and electrical properties, and environmental stability have not been discovered. In this study, we explored a unique fluid-spinning strategy to obtain a series of scalable inorganic semiconductor yarns including neat and hybrid semiconductor yarns.
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